Electromagnetic emissions from GaN power IC at varying distance and frequency

Vivek Sangwan; Dipesh Kapoor; Cher Ming Tan

doi:10.1109/ISEMC.2018.8393869

Electromagnetic emissions from GaN power IC at varying distance and frequency

Vivek Sangwan
, Dipesh Kapoor
, Cher Ming Tan

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Electromagnetic emissions (EME) from Integrated Circuits (ICs) is increasing due to rapid increase in their operating frequencies and layout complexity. Near field analysis is one of the most common and effective method to measure EME. In this work, magnetic field and electric field of IC is analyzed at various distances from the surface of IC through simulation model. It is found that the magnetic field is major source of emission in vicinity of IC than electric field. It is also found that the location of maximum emission of magnetic field varies with the change in frequency as well. This work helps in determining the optimum distance between the adjacent devices to keep the EME in check.

Original language	English
Title of host publication	2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	687-691
Number of pages	5
ISBN (Electronic)	9781509059973
DOIs	https://doi.org/10.1109/ISEMC.2018.8393869
State	Published - 22 06 2018
Event	60th IEEE International Symposium on Electromagnetic Compatibility and 9th IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018 - Suntec City, Singapore Duration: 14 05 2018 → 18 05 2018

Publication series

Name	2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018

Conference

Conference	60th IEEE International Symposium on Electromagnetic Compatibility and 9th IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018
Country/Territory	Singapore
City	Suntec City
Period	14/05/18 → 18/05/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

Electomagnetic Emissions (EMEs)
Electromagnetic Compatibility (EMC)
Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT)
Near field measurement

Access to Document

10.1109/ISEMC.2018.8393869

Cite this

Sangwan, V., Kapoor, D., & Tan, C. M. (2018). Electromagnetic emissions from GaN power IC at varying distance and frequency. In 2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018 (pp. 687-691). (2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISEMC.2018.8393869

Sangwan, Vivek ; Kapoor, Dipesh ; Tan, Cher Ming. / Electromagnetic emissions from GaN power IC at varying distance and frequency. 2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 687-691 (2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018).

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abstract = "Electromagnetic emissions (EME) from Integrated Circuits (ICs) is increasing due to rapid increase in their operating frequencies and layout complexity. Near field analysis is one of the most common and effective method to measure EME. In this work, magnetic field and electric field of IC is analyzed at various distances from the surface of IC through simulation model. It is found that the magnetic field is major source of emission in vicinity of IC than electric field. It is also found that the location of maximum emission of magnetic field varies with the change in frequency as well. This work helps in determining the optimum distance between the adjacent devices to keep the EME in check.",

keywords = "Electomagnetic Emissions (EMEs), Electromagnetic Compatibility (EMC), Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT), Near field measurement",

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Sangwan, V, Kapoor, D & Tan, CM 2018, Electromagnetic emissions from GaN power IC at varying distance and frequency. in 2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018. 2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018, Institute of Electrical and Electronics Engineers Inc., pp. 687-691, 60th IEEE International Symposium on Electromagnetic Compatibility and 9th IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018, Suntec City, Singapore, 14/05/18. https://doi.org/10.1109/ISEMC.2018.8393869

Electromagnetic emissions from GaN power IC at varying distance and frequency. / Sangwan, Vivek; Kapoor, Dipesh; Tan, Cher Ming.
2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 687-691 (2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Sangwan, Vivek

AU - Kapoor, Dipesh

AU - Tan, Cher Ming

PY - 2018/6/22

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N2 - Electromagnetic emissions (EME) from Integrated Circuits (ICs) is increasing due to rapid increase in their operating frequencies and layout complexity. Near field analysis is one of the most common and effective method to measure EME. In this work, magnetic field and electric field of IC is analyzed at various distances from the surface of IC through simulation model. It is found that the magnetic field is major source of emission in vicinity of IC than electric field. It is also found that the location of maximum emission of magnetic field varies with the change in frequency as well. This work helps in determining the optimum distance between the adjacent devices to keep the EME in check.

AB - Electromagnetic emissions (EME) from Integrated Circuits (ICs) is increasing due to rapid increase in their operating frequencies and layout complexity. Near field analysis is one of the most common and effective method to measure EME. In this work, magnetic field and electric field of IC is analyzed at various distances from the surface of IC through simulation model. It is found that the magnetic field is major source of emission in vicinity of IC than electric field. It is also found that the location of maximum emission of magnetic field varies with the change in frequency as well. This work helps in determining the optimum distance between the adjacent devices to keep the EME in check.

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KW - Electromagnetic Compatibility (EMC)

KW - Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT)

KW - Near field measurement

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Sangwan V, Kapoor D, Tan CM. Electromagnetic emissions from GaN power IC at varying distance and frequency. In 2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 687-691. (2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018). doi: 10.1109/ISEMC.2018.8393869

Electromagnetic emissions from GaN power IC at varying distance and frequency

Abstract

Publication series

Conference

Bibliographical note

Keywords

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