Electron-electron interactions in a two-dimensional electron system in an Al0.15Ga0.85N/GaN heterostructure grown on p-type Si

Jian Zhe Huang; Kuang Yao Chen; Kui Ming Chen; Shiou Shian Han; Li Hung Lin; Zhi Hao Sun; C. T. Liang; P. H. Chang; N. C. Chen; Chin An Chang

doi:10.3938/jkps.50.754

Electron-electron interactions in a two-dimensional electron system in an Al_0.15Ga_0.85N/GaN heterostructure grown on p-type Si

Jian Zhe Huang, Kuang Yao Chen, Kui Ming Chen, Shiou Shian Han, Li Hung Lin^*, Zhi Hao Sun, C. T. Liang, P. H. Chang, N. C. Chen, Chin An Chang

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

We report on experimental studies of an Al_0.15Ga _0.85N/GaN high-electron-mobility transistor structure grown on a p-type Si (111) substrate. This structure is compatible with complementary metal-oxide-semiconductor (CMOS) technology and, thus, has great potential device applications. The low-temperature magnetoresistivity shows a parabolic dependence on the applied perpendicular magnetic field. This effect is ascribed to electron-electron interaction (EEI) effects in a weakly-disordered two-dimensional system. Our experimental results agree with the EEI theory when the correction term in the ballistic region has been subtracted.

Original language	English
Pages (from-to)	754-758
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	3
DOIs	https://doi.org/10.3938/jkps.50.754
State	Published - 03 2007

Keywords

CMOS
GaN
HEMT
Si

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title = "Electron-electron interactions in a two-dimensional electron system in an Al0.15Ga0.85N/GaN heterostructure grown on p-type Si",

abstract = "We report on experimental studies of an Al0.15Ga 0.85N/GaN high-electron-mobility transistor structure grown on a p-type Si (111) substrate. This structure is compatible with complementary metal-oxide-semiconductor (CMOS) technology and, thus, has great potential device applications. The low-temperature magnetoresistivity shows a parabolic dependence on the applied perpendicular magnetic field. This effect is ascribed to electron-electron interaction (EEI) effects in a weakly-disordered two-dimensional system. Our experimental results agree with the EEI theory when the correction term in the ballistic region has been subtracted.",

keywords = "CMOS, GaN, HEMT, Si",

author = "Huang, {Jian Zhe} and Chen, {Kuang Yao} and Chen, {Kui Ming} and Han, {Shiou Shian} and Lin, {Li Hung} and Sun, {Zhi Hao} and Liang, {C. T.} and Chang, {P. H.} and Chen, {N. C.} and Chang, {Chin An}",

year = "2007",

month = mar,

doi = "10.3938/jkps.50.754",

language = "英语",

volume = "50",

pages = "754--758",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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TY - JOUR

T1 - Electron-electron interactions in a two-dimensional electron system in an Al0.15Ga0.85N/GaN heterostructure grown on p-type Si

AU - Huang, Jian Zhe

AU - Chen, Kuang Yao

AU - Chen, Kui Ming

AU - Han, Shiou Shian

AU - Lin, Li Hung

AU - Sun, Zhi Hao

AU - Liang, C. T.

AU - Chang, P. H.

AU - Chen, N. C.

AU - Chang, Chin An

PY - 2007/3

Y1 - 2007/3

N2 - We report on experimental studies of an Al0.15Ga 0.85N/GaN high-electron-mobility transistor structure grown on a p-type Si (111) substrate. This structure is compatible with complementary metal-oxide-semiconductor (CMOS) technology and, thus, has great potential device applications. The low-temperature magnetoresistivity shows a parabolic dependence on the applied perpendicular magnetic field. This effect is ascribed to electron-electron interaction (EEI) effects in a weakly-disordered two-dimensional system. Our experimental results agree with the EEI theory when the correction term in the ballistic region has been subtracted.

AB - We report on experimental studies of an Al0.15Ga 0.85N/GaN high-electron-mobility transistor structure grown on a p-type Si (111) substrate. This structure is compatible with complementary metal-oxide-semiconductor (CMOS) technology and, thus, has great potential device applications. The low-temperature magnetoresistivity shows a parabolic dependence on the applied perpendicular magnetic field. This effect is ascribed to electron-electron interaction (EEI) effects in a weakly-disordered two-dimensional system. Our experimental results agree with the EEI theory when the correction term in the ballistic region has been subtracted.

KW - CMOS

KW - GaN

KW - HEMT

KW - Si

UR - http://www.scopus.com/inward/record.url?scp=34147125326&partnerID=8YFLogxK

U2 - 10.3938/jkps.50.754

DO - 10.3938/jkps.50.754

M3 - 文章

AN - SCOPUS:34147125326

SN - 0374-4884

VL - 50

SP - 754

EP - 758

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Electron-electron interactions in a two-dimensional electron system in an Al_0.15Ga_0.85N/GaN heterostructure grown on p-type Si

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