Electron-electron interactions in Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on Si substrates

C. T. Liang; Li Hung Lin; J. Z. Huang; Zhi Yao Zhang; Zhe Hau Sun; Kuang Yao Chen; N. C. Chen; P. H. Chang; Chin An Chang

doi:10.1063/1.2430778

Electron-electron interactions in Al_0.15Ga_0.85N/GaN high electron mobility transistor structures grown on Si substrates

C. T. Liang^*, Li Hung Lin, J. Z. Huang, Zhi Yao Zhang, Zhe Hau Sun, Kuang Yao Chen, N. C. Chen, P. H. Chang, Chin An Chang

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

12 Scopus citations

Abstract

We report on magnetotransport studies of Al0.15 Ga0.85 NGaN high electron mobility transistor (HEMT) structures grown on p -type Si (111) substrates. A small but significant decrease of the Hall slope with increasing temperature is observed. Moreover, the converted conductivities reveal that the mobility of the HEMT shows a linear dependence on temperature. All these experimental results can be ascribed to electron-electron interaction (EEI) effects in Alx Ga1-x NGaN HEMT structures grown on Si. The existence of EEI effects can be utilized to design and optimize GaN-based quantum devices on Si such as single-electron transistors and quantum point contacts since EEI effects can strongly modify the transport in semiconductor devices.

Original language	English
Article number	022107
Journal	Applied Physics Letters
Volume	90
Issue number	2
DOIs	https://doi.org/10.1063/1.2430778
State	Published - 2007

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title = "Electron-electron interactions in Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on Si substrates",

abstract = "We report on magnetotransport studies of Al0.15 Ga0.85 NGaN high electron mobility transistor (HEMT) structures grown on p -type Si (111) substrates. A small but significant decrease of the Hall slope with increasing temperature is observed. Moreover, the converted conductivities reveal that the mobility of the HEMT shows a linear dependence on temperature. All these experimental results can be ascribed to electron-electron interaction (EEI) effects in Alx Ga1-x NGaN HEMT structures grown on Si. The existence of EEI effects can be utilized to design and optimize GaN-based quantum devices on Si such as single-electron transistors and quantum point contacts since EEI effects can strongly modify the transport in semiconductor devices.",

author = "Liang, {C. T.} and Lin, {Li Hung} and Huang, {J. Z.} and Zhang, {Zhi Yao} and Sun, {Zhe Hau} and Chen, {Kuang Yao} and Chen, {N. C.} and Chang, {P. H.} and Chang, {Chin An}",

year = "2007",

doi = "10.1063/1.2430778",

language = "英语",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

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TY - JOUR

T1 - Electron-electron interactions in Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on Si substrates

AU - Liang, C. T.

AU - Lin, Li Hung

AU - Huang, J. Z.

AU - Zhang, Zhi Yao

AU - Sun, Zhe Hau

AU - Chen, Kuang Yao

AU - Chen, N. C.

AU - Chang, P. H.

AU - Chang, Chin An

PY - 2007

Y1 - 2007

N2 - We report on magnetotransport studies of Al0.15 Ga0.85 NGaN high electron mobility transistor (HEMT) structures grown on p -type Si (111) substrates. A small but significant decrease of the Hall slope with increasing temperature is observed. Moreover, the converted conductivities reveal that the mobility of the HEMT shows a linear dependence on temperature. All these experimental results can be ascribed to electron-electron interaction (EEI) effects in Alx Ga1-x NGaN HEMT structures grown on Si. The existence of EEI effects can be utilized to design and optimize GaN-based quantum devices on Si such as single-electron transistors and quantum point contacts since EEI effects can strongly modify the transport in semiconductor devices.

AB - We report on magnetotransport studies of Al0.15 Ga0.85 NGaN high electron mobility transistor (HEMT) structures grown on p -type Si (111) substrates. A small but significant decrease of the Hall slope with increasing temperature is observed. Moreover, the converted conductivities reveal that the mobility of the HEMT shows a linear dependence on temperature. All these experimental results can be ascribed to electron-electron interaction (EEI) effects in Alx Ga1-x NGaN HEMT structures grown on Si. The existence of EEI effects can be utilized to design and optimize GaN-based quantum devices on Si such as single-electron transistors and quantum point contacts since EEI effects can strongly modify the transport in semiconductor devices.

UR - http://www.scopus.com/inward/record.url?scp=33846260161&partnerID=8YFLogxK

U2 - 10.1063/1.2430778

DO - 10.1063/1.2430778

M3 - 文章

AN - SCOPUS:33846260161

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022107

ER -

Electron-electron interactions in Al_0.15Ga_0.85N/GaN high electron mobility transistor structures grown on Si substrates

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