Electron heating in Al0.15Ga0.85N/GaN heterostructures grown on p-type Si

Li Hung Lin*, Kui Ming Chen, Shiou Shian Han, C. T. Liang, Wen Chang Hsueh, Kuang Yao Chen, Zhi Hao Sun, P. H. Chang, N. C. Chen, Chin An Chang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations


The transport behaviors of two GaN/AlGaN two-dimensional electron systems (2DESs) grown on Si substrates were studied, and a SiNx treatment employed in sample fabrication enhanced the conductance of one of the 2DESs. We study the electron heating effect in the 2DESs experimentally, with resistances as self-thermometers. The relation of Te∼I1.42 was obtained, which is in contrast to Te∼I0.5 in the resistivity peaks in a GaAs/AlGaAs 2DES. This may be caused by the scattering effect in this sample.

Original languageEnglish
Pages (from-to)343-346
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number2
StatePublished - 12 2007


  • Current scaling
  • Electron heating
  • GaN
  • Si
  • Two-dimensional electron system


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