Abstract
The transport behaviors of two GaN/AlGaN two-dimensional electron systems (2DESs) grown on Si substrates were studied, and a SiNx treatment employed in sample fabrication enhanced the conductance of one of the 2DESs. We study the electron heating effect in the 2DESs experimentally, with resistances as self-thermometers. The relation of Te∼I1.42 was obtained, which is in contrast to Te∼I0.5 in the resistivity peaks in a GaAs/AlGaAs 2DES. This may be caused by the scattering effect in this sample.
Original language | English |
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Pages (from-to) | 343-346 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 40 |
Issue number | 2 |
DOIs | |
State | Published - 12 2007 |
Keywords
- Current scaling
- Electron heating
- GaN
- Si
- Two-dimensional electron system