Electron heating in Al0.15Ga0.85N/GaN heterostructures grown on p-type Si

Li Hung Lin; Kui Ming Chen; Shiou Shian Han; C. T. Liang; Wen Chang Hsueh; Kuang Yao Chen; Zhi Hao Sun; P. H. Chang; N. C. Chen; Chin An Chang

doi:10.1016/j.physe.2007.06.029

Electron heating in Al_0.15Ga_0.85N/GaN heterostructures grown on p-type Si

Li Hung Lin^*
, Kui Ming Chen
, Shiou Shian Han
, C. T. Liang
, Wen Chang Hsueh
, Kuang Yao Chen
, Zhi Hao Sun
, P. H. Chang
, N. C. Chen
, Chin An Chang

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

National Chiayi University
National Taiwan University
Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

The transport behaviors of two GaN/AlGaN two-dimensional electron systems (2DESs) grown on Si substrates were studied, and a SiN_x treatment employed in sample fabrication enhanced the conductance of one of the 2DESs. We study the electron heating effect in the 2DESs experimentally, with resistances as self-thermometers. The relation of T_e∼I^1.42 was obtained, which is in contrast to T_e∼I^0.5 in the resistivity peaks in a GaAs/AlGaAs 2DES. This may be caused by the scattering effect in this sample.

Original language	English
Pages (from-to)	343-346
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	2
DOIs	https://doi.org/10.1016/j.physe.2007.06.029
State	Published - 12 2007

Keywords

Current scaling
Electron heating
GaN
Si
Two-dimensional electron system

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10.1016/j.physe.2007.06.029

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title = "Electron heating in Al0.15Ga0.85N/GaN heterostructures grown on p-type Si",

abstract = "The transport behaviors of two GaN/AlGaN two-dimensional electron systems (2DESs) grown on Si substrates were studied, and a SiNx treatment employed in sample fabrication enhanced the conductance of one of the 2DESs. We study the electron heating effect in the 2DESs experimentally, with resistances as self-thermometers. The relation of Te∼I1.42 was obtained, which is in contrast to Te∼I0.5 in the resistivity peaks in a GaAs/AlGaAs 2DES. This may be caused by the scattering effect in this sample.",

keywords = "Current scaling, Electron heating, GaN, Si, Two-dimensional electron system",

author = "Lin, \{Li Hung\} and Chen, \{Kui Ming\} and Han, \{Shiou Shian\} and Liang, \{C. T.\} and Hsueh, \{Wen Chang\} and \{Yao Chen\}, Kuang and Sun, \{Zhi Hao\} and Chang, \{P. H.\} and Chen, \{N. C.\} and Chang, \{Chin An\}",

year = "2007",

month = dec,

doi = "10.1016/j.physe.2007.06.029",

language = "英语",

volume = "40",

pages = "343--346",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Electron heating in Al0.15Ga0.85N/GaN heterostructures grown on p-type Si

AU - Lin, Li Hung

AU - Chen, Kui Ming

AU - Han, Shiou Shian

AU - Liang, C. T.

AU - Hsueh, Wen Chang

AU - Yao Chen, Kuang

AU - Sun, Zhi Hao

AU - Chang, P. H.

AU - Chen, N. C.

AU - Chang, Chin An

PY - 2007/12

Y1 - 2007/12

N2 - The transport behaviors of two GaN/AlGaN two-dimensional electron systems (2DESs) grown on Si substrates were studied, and a SiNx treatment employed in sample fabrication enhanced the conductance of one of the 2DESs. We study the electron heating effect in the 2DESs experimentally, with resistances as self-thermometers. The relation of Te∼I1.42 was obtained, which is in contrast to Te∼I0.5 in the resistivity peaks in a GaAs/AlGaAs 2DES. This may be caused by the scattering effect in this sample.

AB - The transport behaviors of two GaN/AlGaN two-dimensional electron systems (2DESs) grown on Si substrates were studied, and a SiNx treatment employed in sample fabrication enhanced the conductance of one of the 2DESs. We study the electron heating effect in the 2DESs experimentally, with resistances as self-thermometers. The relation of Te∼I1.42 was obtained, which is in contrast to Te∼I0.5 in the resistivity peaks in a GaAs/AlGaAs 2DES. This may be caused by the scattering effect in this sample.

KW - Current scaling

KW - Electron heating

KW - GaN

KW - Si

KW - Two-dimensional electron system

UR - https://www.scopus.com/pages/publications/36148929797

U2 - 10.1016/j.physe.2007.06.029

DO - 10.1016/j.physe.2007.06.029

M3 - 文章

AN - SCOPUS:36148929797

SN - 1386-9477

VL - 40

SP - 343

EP - 346

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 2

ER -

Electron heating in Al_0.15Ga_0.85N/GaN heterostructures grown on p-type Si

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