Electron inelastic mean free paths in several solids for 200 eV ⩽ E ⩽ 10 keV

J. C. Ashley; C. J. Tung

doi:10.1002/sia.740040205

Electron inelastic mean free paths in several solids for 200 eV ⩽ E ⩽ 10 keV

J. C. Ashley^*
, C. J. Tung

^*Corresponding author for this work

Oak Ridge National Laboratory
National Tsing Hua University

Research output: Contribution to journal › Journal Article › peer-review

147 Scopus citations

Abstract

Values of k and p are given for predicting inelastic mean free paths for electrons with energies from 200 eV to 10 keV from the simple formula λ = kE^p, based on theoretical calculations for ten elemental and compound solids. These results indicate that in the energy range 400 eV ⩽ E ⩽ 2000 eV, the value of p lies in the range 0.65–0.80. For Si and SiO₂, presentation of the available experimental data and theoretical results illustrate the differences which exist in the values of electron mean free paths.

Original language	English
Pages (from-to)	52-55
Number of pages	4
Journal	Surface and Interface Analysis
Volume	4
Issue number	2
DOIs	https://doi.org/10.1002/sia.740040205
State	Published - 04 1982
Externally published	Yes

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title = "Electron inelastic mean free paths in several solids for 200 eV ⩽ E ⩽ 10 keV",

abstract = "Values of k and p are given for predicting inelastic mean free paths for electrons with energies from 200 eV to 10 keV from the simple formula λ = kEp, based on theoretical calculations for ten elemental and compound solids. These results indicate that in the energy range 400 eV ⩽ E ⩽ 2000 eV, the value of p lies in the range 0.65–0.80. For Si and SiO2, presentation of the available experimental data and theoretical results illustrate the differences which exist in the values of electron mean free paths.",

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N2 - Values of k and p are given for predicting inelastic mean free paths for electrons with energies from 200 eV to 10 keV from the simple formula λ = kEp, based on theoretical calculations for ten elemental and compound solids. These results indicate that in the energy range 400 eV ⩽ E ⩽ 2000 eV, the value of p lies in the range 0.65–0.80. For Si and SiO2, presentation of the available experimental data and theoretical results illustrate the differences which exist in the values of electron mean free paths.

AB - Values of k and p are given for predicting inelastic mean free paths for electrons with energies from 200 eV to 10 keV from the simple formula λ = kEp, based on theoretical calculations for ten elemental and compound solids. These results indicate that in the energy range 400 eV ⩽ E ⩽ 2000 eV, the value of p lies in the range 0.65–0.80. For Si and SiO2, presentation of the available experimental data and theoretical results illustrate the differences which exist in the values of electron mean free paths.

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M3 - 文章

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ER -

Electron inelastic mean free paths in several solids for 200 eV ⩽ E ⩽ 10 keV

Abstract

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