Electron transport in In-rich in xGa 1-xN films

Shih Kai Lin; Kun Ta Wu; Chao Ping Huang; C. T. Liang; Y. H. Chang; Y. F. Chen; P. H. Chang; N. C. Chen; C. A. Chang; H. C. Peng; C. F. Shih; K. S. Liu; T. Y. Liu

doi:10.1063/1.1847694

Electron transport in In-rich in _xGa _1-xN films

Shih Kai Lin, Kun Ta Wu, Chao Ping Huang, C. T. Liang, Y. H. Chang, Y. F. Chen, P. H. Chang^*, N. C. Chen, C. A. Chang, H. C. Peng, C. F. Shih, K. S. Liu, T. Y. Liu

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Journal Article › peer-review

38 Scopus citations

Abstract

We have performed electrical transport measurements on metal-organic vapor phase epitaxy grown In-rich In _xGa _1-xN (x= 1, 0.98, and 0.92) films. Within the experimental error, the electron density in InGaN films is temperature independent over a wide temperature range (4 K ≤ T ≤ 285 K). Therefore, In _xGa _1-xN (0.92 ≤ x ≤ 1) films can be regarded as degenerate semiconductor systems. The experimental results demonstrate that electron transport in In-rich In _xGa _1-xN (x=l, 0.98, and 0.92) films is metalliclike. This is supported by the temperature dependence of the density, resistivity, and mobility which is similar to that of a metal. We suggest that over the whole measuring temperature range residue imperfection scattering limits the electron mobility in In-rich In _xGa _1-xN (x=1, 0.98, and 0.92) films.

Original language	English
Article number	046101
Journal	Journal of Applied Physics
Volume	97
Issue number	4
DOIs	https://doi.org/10.1063/1.1847694
State	Published - 15 02 2005

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@article{71ca205327c445d7bbd522c7dba4c4ce,

title = "Electron transport in In-rich in xGa 1-xN films",

abstract = "We have performed electrical transport measurements on metal-organic vapor phase epitaxy grown In-rich In xGa 1-xN (x= 1, 0.98, and 0.92) films. Within the experimental error, the electron density in InGaN films is temperature independent over a wide temperature range (4 K ≤ T ≤ 285 K). Therefore, In xGa 1-xN (0.92 ≤ x ≤ 1) films can be regarded as degenerate semiconductor systems. The experimental results demonstrate that electron transport in In-rich In xGa 1-xN (x=l, 0.98, and 0.92) films is metalliclike. This is supported by the temperature dependence of the density, resistivity, and mobility which is similar to that of a metal. We suggest that over the whole measuring temperature range residue imperfection scattering limits the electron mobility in In-rich In xGa 1-xN (x=1, 0.98, and 0.92) films.",

author = "Lin, {Shih Kai} and Wu, {Kun Ta} and Huang, {Chao Ping} and Liang, {C. T.} and Chang, {Y. H.} and Chen, {Y. F.} and Chang, {P. H.} and Chen, {N. C.} and Chang, {C. A.} and Peng, {H. C.} and Shih, {C. F.} and Liu, {K. S.} and Liu, {T. Y.}",

year = "2005",

month = feb,

day = "15",

doi = "10.1063/1.1847694",

language = "英语",

volume = "97",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Electron transport in In-rich in xGa 1-xN films

AU - Lin, Shih Kai

AU - Wu, Kun Ta

AU - Huang, Chao Ping

AU - Liang, C. T.

AU - Chang, Y. H.

AU - Chen, Y. F.

AU - Chang, P. H.

AU - Chen, N. C.

AU - Chang, C. A.

AU - Peng, H. C.

AU - Shih, C. F.

AU - Liu, K. S.

AU - Liu, T. Y.

PY - 2005/2/15

Y1 - 2005/2/15

N2 - We have performed electrical transport measurements on metal-organic vapor phase epitaxy grown In-rich In xGa 1-xN (x= 1, 0.98, and 0.92) films. Within the experimental error, the electron density in InGaN films is temperature independent over a wide temperature range (4 K ≤ T ≤ 285 K). Therefore, In xGa 1-xN (0.92 ≤ x ≤ 1) films can be regarded as degenerate semiconductor systems. The experimental results demonstrate that electron transport in In-rich In xGa 1-xN (x=l, 0.98, and 0.92) films is metalliclike. This is supported by the temperature dependence of the density, resistivity, and mobility which is similar to that of a metal. We suggest that over the whole measuring temperature range residue imperfection scattering limits the electron mobility in In-rich In xGa 1-xN (x=1, 0.98, and 0.92) films.

AB - We have performed electrical transport measurements on metal-organic vapor phase epitaxy grown In-rich In xGa 1-xN (x= 1, 0.98, and 0.92) films. Within the experimental error, the electron density in InGaN films is temperature independent over a wide temperature range (4 K ≤ T ≤ 285 K). Therefore, In xGa 1-xN (0.92 ≤ x ≤ 1) films can be regarded as degenerate semiconductor systems. The experimental results demonstrate that electron transport in In-rich In xGa 1-xN (x=l, 0.98, and 0.92) films is metalliclike. This is supported by the temperature dependence of the density, resistivity, and mobility which is similar to that of a metal. We suggest that over the whole measuring temperature range residue imperfection scattering limits the electron mobility in In-rich In xGa 1-xN (x=1, 0.98, and 0.92) films.

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U2 - 10.1063/1.1847694

DO - 10.1063/1.1847694

M3 - 文章

AN - SCOPUS:13844280282

SN - 0021-8979

VL - 97

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 046101

ER -

Electron transport in In-rich in _xGa _1-xN films

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