Electronic Reliability Analysis under Radiation Environment

Cher Ming Tan*, Vimal Kant Pandey, Yueh Chiang, Tsung Ping Lee

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Abstract

Advances in semiconductor technology have enhanced the functionality of sensor arrays with reduced feature sizes. Owing to the spread of the Internet of Things, sensors can now be found in many applications operating in various environments. Proton and neutron radiation are always present around us but have not been detrimental to electronics at sea level. With the decreasing size of transistors and sensor elements and the increasing density of transistors in ICs of sensors and actuators, the effect of radiation on the reliability of semiconductor devices, sensors, and their electronic circuits (collectively called sensing systems) is no longer negligible, even at sea level. However, the knowledge of radiation physics and that of semiconductor physics are very different, and merging of the two sets of knowledge is necessary to evaluate the effect of radiation on the reliability of sensing systems. In this work, we summarize the extensive studies of the effects of radiation on semiconductor devices from space and avionics investigations, and we apply their results to study the radiation reliability of sensing systems in standard industry applications. In this work, we also illustrate how one can perform radiation reliability analysis for electronics in a proximity sensor, which we investigated by performing radiation experiments.

Original languageEnglish
Article numberA3
JournalSensors and Materials
Volume34
DOIs
StatePublished - 2021

Bibliographical note

Publisher Copyright:
© MYU K.K.

Keywords

  • Gamma radiation
  • MOSFET
  • Proton radiation
  • Soft error effect
  • Total ionizing dose effect

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