Electrostatic reliability characteristics of GaN flip-chip power light-emitting diodes with metal-oxide-silicon submount

Liann Be Chang; Kuo Ling Chiang; Hsin Yi Chang; Ming Jer Jeng; Chia Yi Yen; Cheng Chen Lin; Yuan Hsiao Chang; Mu Jen Lai; Yu Lin Lee; Tai Wei Soong

doi:10.1109/TED.2009.2033774

Electrostatic reliability characteristics of GaN flip-chip power light-emitting diodes with metal-oxide-silicon submount

Liann Be Chang^*, Kuo Ling Chiang, Hsin Yi Chang, Ming Jer Jeng, Chia Yi Yen, Cheng Chen Lin, Yuan Hsiao Chang, Mu Jen Lai, Yu Lin Lee, Tai Wei Soong

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

9 Scopus citations

Abstract

The electrostatic reliability characteristics of gallium nitride flip-chip (FC) power light-emitting diodes (PLEDs) with metal-oxide-silicon (MOS) submount are investigated for the first time. The electrostatic damage reliability of the reported diode submount and that of our proposed simple structure MOS submount are fabricated and compared. Their corresponding electrostatic protection capabilities are increased from 200 V (conventional PLED) to 500 V (FC-PLED on diode submount), to 500 V (FC-PLED on MOS submount with a SiO2 thickness of 297 Å), and even to a value as high as 1000 V (FC-PLED at a SiO₂ thickness of 167 Å), which are much higher than the PLED industrial test value of 150 V at -5 V/-10 μA criterion and are also much more robust than the previous academic reports.

Original language	English
Article number	5340648
Pages (from-to)	119-124
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	1
DOIs	https://doi.org/10.1109/TED.2009.2033774
State	Published - 01 2010

Keywords

Electrostatic damage (ESD)
Flip-chip lightemitting diode (FCLED)
Metal-oxide-silicon (MOS) submount
Reliabilty

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Chang, L. B., Chiang, K. L., Chang, H. Y., Jeng, M. J., Yen, C. Y., Lin, C. C., Chang, Y. H., Lai, M. J., Lee, Y. L., & Soong, T. W. (2010). Electrostatic reliability characteristics of GaN flip-chip power light-emitting diodes with metal-oxide-silicon submount. IEEE Transactions on Electron Devices, 57(1), 119-124. Article 5340648. https://doi.org/10.1109/TED.2009.2033774

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title = "Electrostatic reliability characteristics of GaN flip-chip power light-emitting diodes with metal-oxide-silicon submount",

abstract = "The electrostatic reliability characteristics of gallium nitride flip-chip (FC) power light-emitting diodes (PLEDs) with metal-oxide-silicon (MOS) submount are investigated for the first time. The electrostatic damage reliability of the reported diode submount and that of our proposed simple structure MOS submount are fabricated and compared. Their corresponding electrostatic protection capabilities are increased from 200 V (conventional PLED) to 500 V (FC-PLED on diode submount), to 500 V (FC-PLED on MOS submount with a SiO2 thickness of 297 {\AA}), and even to a value as high as 1000 V (FC-PLED at a SiO2 thickness of 167 {\AA}), which are much higher than the PLED industrial test value of 150 V at -5 V/-10 μA criterion and are also much more robust than the previous academic reports.",

keywords = "Electrostatic damage (ESD), Flip-chip lightemitting diode (FCLED), Metal-oxide-silicon (MOS) submount, Reliabilty",

author = "Chang, {Liann Be} and Chiang, {Kuo Ling} and Chang, {Hsin Yi} and Jeng, {Ming Jer} and Yen, {Chia Yi} and Lin, {Cheng Chen} and Chang, {Yuan Hsiao} and Lai, {Mu Jen} and Lee, {Yu Lin} and Soong, {Tai Wei}",

year = "2010",

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doi = "10.1109/TED.2009.2033774",

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AU - Chang, Liann Be

AU - Chiang, Kuo Ling

AU - Chang, Hsin Yi

AU - Jeng, Ming Jer

AU - Yen, Chia Yi

AU - Lin, Cheng Chen

AU - Chang, Yuan Hsiao

AU - Lai, Mu Jen

AU - Lee, Yu Lin

AU - Soong, Tai Wei

PY - 2010/1

Y1 - 2010/1

N2 - The electrostatic reliability characteristics of gallium nitride flip-chip (FC) power light-emitting diodes (PLEDs) with metal-oxide-silicon (MOS) submount are investigated for the first time. The electrostatic damage reliability of the reported diode submount and that of our proposed simple structure MOS submount are fabricated and compared. Their corresponding electrostatic protection capabilities are increased from 200 V (conventional PLED) to 500 V (FC-PLED on diode submount), to 500 V (FC-PLED on MOS submount with a SiO2 thickness of 297 Å), and even to a value as high as 1000 V (FC-PLED at a SiO2 thickness of 167 Å), which are much higher than the PLED industrial test value of 150 V at -5 V/-10 μA criterion and are also much more robust than the previous academic reports.

AB - The electrostatic reliability characteristics of gallium nitride flip-chip (FC) power light-emitting diodes (PLEDs) with metal-oxide-silicon (MOS) submount are investigated for the first time. The electrostatic damage reliability of the reported diode submount and that of our proposed simple structure MOS submount are fabricated and compared. Their corresponding electrostatic protection capabilities are increased from 200 V (conventional PLED) to 500 V (FC-PLED on diode submount), to 500 V (FC-PLED on MOS submount with a SiO2 thickness of 297 Å), and even to a value as high as 1000 V (FC-PLED at a SiO2 thickness of 167 Å), which are much higher than the PLED industrial test value of 150 V at -5 V/-10 μA criterion and are also much more robust than the previous academic reports.

KW - Electrostatic damage (ESD)

KW - Flip-chip lightemitting diode (FCLED)

KW - Metal-oxide-silicon (MOS) submount

KW - Reliabilty

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DO - 10.1109/TED.2009.2033774

M3 - 文章

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SN - 0018-9383

VL - 57

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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M1 - 5340648

ER -

Electrostatic reliability characteristics of GaN flip-chip power light-emitting diodes with metal-oxide-silicon submount

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Keywords

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