Electrostatic reliability characteristics of GaN flip-chip power light-emitting diodes with metal-oxide-silicon submount

Liann Be Chang*, Kuo Ling Chiang, Hsin Yi Chang, Ming Jer Jeng, Chia Yi Yen, Cheng Chen Lin, Yuan Hsiao Chang, Mu Jen Lai, Yu Lin Lee, Tai Wei Soong

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

9 Scopus citations

Abstract

The electrostatic reliability characteristics of gallium nitride flip-chip (FC) power light-emitting diodes (PLEDs) with metal-oxide-silicon (MOS) submount are investigated for the first time. The electrostatic damage reliability of the reported diode submount and that of our proposed simple structure MOS submount are fabricated and compared. Their corresponding electrostatic protection capabilities are increased from 200 V (conventional PLED) to 500 V (FC-PLED on diode submount), to 500 V (FC-PLED on MOS submount with a SiO2 thickness of 297 Å), and even to a value as high as 1000 V (FC-PLED at a SiO2 thickness of 167 Å), which are much higher than the PLED industrial test value of 150 V at -5 V/-10 μA criterion and are also much more robust than the previous academic reports.

Original languageEnglish
Article number5340648
Pages (from-to)119-124
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume57
Issue number1
DOIs
StatePublished - 01 2010

Keywords

  • Electrostatic damage (ESD)
  • Flip-chip lightemitting diode (FCLED)
  • Metal-oxide-silicon (MOS) submount
  • Reliabilty

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