Energy-band engineering and characterization improvements by fluorine incorporation on Gd2O3 nanocrystal memory

Chao Sung Lai; Chih Ting Lin; Jer Chyi Wang; Chu Fa Chan

doi:10.1109/ICSICT.2012.6467581

Energy-band engineering and characterization improvements by fluorine incorporation on Gd₂O₃ nanocrystal memory

Chao Sung Lai^*, Chih Ting Lin, Jer Chyi Wang, Chu Fa Chan

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

As a potential candidate for future nonvolatile memory (NVM) application, the discrete charge storage nodes formed as the nanocrystal (NC) structure has been caught much attention. Among the NC materials, high-k metal oxide is the unique one due to the mixed chemical reactions during high temperature forming process. The over-view of gadolinium oxide nanocrystal (Gd₂O ₃-NC) memory is revealed in this paper. Gd₂O ₃-NC was formed by one step rapid thermal annealing treated on the amorphous Gd₂O₃ film prepared by sputter system. The optical tests were conducted to exam the bandgap value of the Gd ₂O₃-NC and the x-ray tests were conducted to exam the valence band offset. The charge trapping phenomenon can be characterized by the retention tests for various temperatures. Forming gas annealing was treated on the Gd₂O₃-NC to passivate the deep traps. A band engineered method by CF₄ plasma treatment was also conducted to improve the memory characteristics.

Original language	English
Title of host publication	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs	https://doi.org/10.1109/ICSICT.2012.6467581
State	Published - 2012
Event	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China Duration: 29 10 2012 → 01 11 2012

Publication series

Name	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Country/Territory	China
City	Xi'an
Period	29/10/12 → 01/11/12

Access to Document

10.1109/ICSICT.2012.6467581

Cite this

Lai, C. S., Lin, C. T., Wang, J. C., & Chan, C. F. (2012). Energy-band engineering and characterization improvements by fluorine incorporation on Gd₂O₃ nanocrystal memory. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings Article 6467581 (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2012.6467581

Lai, Chao Sung ; Lin, Chih Ting ; Wang, Jer Chyi et al. / Energy-band engineering and characterization improvements by fluorine incorporation on Gd₂O₃ nanocrystal memory. ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

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title = "Energy-band engineering and characterization improvements by fluorine incorporation on Gd2O3 nanocrystal memory",

abstract = "As a potential candidate for future nonvolatile memory (NVM) application, the discrete charge storage nodes formed as the nanocrystal (NC) structure has been caught much attention. Among the NC materials, high-k metal oxide is the unique one due to the mixed chemical reactions during high temperature forming process. The over-view of gadolinium oxide nanocrystal (Gd2O 3-NC) memory is revealed in this paper. Gd2O 3-NC was formed by one step rapid thermal annealing treated on the amorphous Gd2O3 film prepared by sputter system. The optical tests were conducted to exam the bandgap value of the Gd 2O3-NC and the x-ray tests were conducted to exam the valence band offset. The charge trapping phenomenon can be characterized by the retention tests for various temperatures. Forming gas annealing was treated on the Gd2O3-NC to passivate the deep traps. A band engineered method by CF4 plasma treatment was also conducted to improve the memory characteristics.",

author = "Lai, \{Chao Sung\} and Lin, \{Chih Ting\} and Wang, \{Jer Chyi\} and Chan, \{Chu Fa\}",

year = "2012",

doi = "10.1109/ICSICT.2012.6467581",

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booktitle = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 ; Conference date: 29-10-2012 Through 01-11-2012",

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Lai, CS, Lin, CT, Wang, JC & Chan, CF 2012, Energy-band engineering and characterization improvements by fluorine incorporation on Gd₂O₃ nanocrystal memory. in ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 6467581, ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, Xi'an, China, 29/10/12. https://doi.org/10.1109/ICSICT.2012.6467581

Energy-band engineering and characterization improvements by fluorine incorporation on Gd₂O₃ nanocrystal memory. / Lai, Chao Sung; Lin, Chih Ting; Wang, Jer Chyi et al.
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467581 (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - As a potential candidate for future nonvolatile memory (NVM) application, the discrete charge storage nodes formed as the nanocrystal (NC) structure has been caught much attention. Among the NC materials, high-k metal oxide is the unique one due to the mixed chemical reactions during high temperature forming process. The over-view of gadolinium oxide nanocrystal (Gd2O 3-NC) memory is revealed in this paper. Gd2O 3-NC was formed by one step rapid thermal annealing treated on the amorphous Gd2O3 film prepared by sputter system. The optical tests were conducted to exam the bandgap value of the Gd 2O3-NC and the x-ray tests were conducted to exam the valence band offset. The charge trapping phenomenon can be characterized by the retention tests for various temperatures. Forming gas annealing was treated on the Gd2O3-NC to passivate the deep traps. A band engineered method by CF4 plasma treatment was also conducted to improve the memory characteristics.

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Lai CS, Lin CT, Wang JC, Chan CF. Energy-band engineering and characterization improvements by fluorine incorporation on Gd₂O₃ nanocrystal memory. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467581. (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2012.6467581