@inproceedings{33146baae22b424dae53f22c3273276d,
title = "Enhanced flash memory device characteristics using ALD TiN/Al 2O3 nanolaminate charge storage layers",
abstract = "Enhanced flash memory device characteristics using ALD TiN/Al 2O3 nanolaminate charge storage layers have been investigated. After annealing treatment, the TiN nanocrystals embedded in A12O3 films with a small diameter of ∼3 nm and a high-density of >l×1012/cm2 have been formed. The memory devices show a high programming speed of ⇐Vt >1V@Vg/Vd=8V/8V, 10 ≥s and an erasing speed of ⇐Vt >1V@vg/vd=-12V/0V, 1ms. The memory window is increased (⇐Vt >6.7V) with increasing the operation voltage. The memory window is also increased with increasing the number of TiN/Al2O3 nanolaminate layers. Good endurance (10 4 cycles) and retention (charge loss of ∼14% at 20°C and ∼17% at 85°C after 10 years) characteristics of the TiN nanocrystal memory devices can be explained by both of the high-density and layer-by-layer charge storage in the TiN nanocrystals. This novel nanocrystal memory structure can be useful in future nanoscale flash memory device applications.",
author = "S. Maikap and Rahaman, {S. Z.} and W. Banerjee and Lin, {C. H.} and Tzeng, {P. J.} and Wang, {C. C.} and Kao, {M. J.} and Tsai, {M. J.}",
year = "2008",
doi = "10.1109/ICSICT.2008.4734702",
language = "英语",
isbn = "9781424421855",
series = "International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT",
pages = "958--961",
booktitle = "ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings",
note = "2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 ; Conference date: 20-10-2008 Through 23-10-2008",
}