Enhanced Flash Memory Device Characteristics Using ALD TiN/Al2O3 Nanolaminate Charge Storage Layers

Siddheswar Maikap; S. Z. Rahaman; W. Banerjee; C.H. Lin; P. J. Tzeng; Chun-Chieh Wang; M. J. Kao; M. J. Tsai

Enhanced Flash Memory Device Characteristics Using ALD TiN/Al2O3 Nanolaminate Charge Storage Layers

Siddheswar Maikap, S. Z. Rahaman, W. Banerjee, C.H. Lin, P. J. Tzeng, Chun-Chieh Wang, M. J. Kao, M. J. Tsai

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2008
Event	9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China Duration: 20 10 2008 → 23 10 2008

Conference

Conference	9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)
Period	20/10/08 → 23/10/08

Cite this

@conference{0d9ce695538047b7ba234f8747296765,

title = "Enhanced Flash Memory Device Characteristics Using ALD TiN/Al2O3 Nanolaminate Charge Storage Layers",

author = "Siddheswar Maikap and Rahaman, \{S. Z.\} and W. Banerjee and C.H. Lin and Tzeng, \{P. J.\} and Chun-Chieh Wang and Kao, \{M. J.\} and Tsai, \{M. J.\}",

year = "2008",

language = "American English",

note = "9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) ; Conference date: 20-10-2008 Through 23-10-2008",

}

TY - CONF

T1 - Enhanced Flash Memory Device Characteristics Using ALD TiN/Al2O3 Nanolaminate Charge Storage Layers

AU - Maikap, Siddheswar

AU - Rahaman, S. Z.

AU - Banerjee, W.

AU - Lin, C.H.

AU - Tzeng, P. J.

AU - Wang, Chun-Chieh

AU - Kao, M. J.

AU - Tsai, M. J.

PY - 2008

Y1 - 2008

M3 - Proceeding

T2 - 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

Y2 - 20 October 2008 through 23 October 2008

ER -