Enhanced hole mobilities in tensile-strained Si_1-yC_y alloy PMOSFETs

Engineering

• Tensiles 100%
• Alloy 100%
• Channel Layer 66%
• Fabrication 33%
• Properties 33%
• Surfaces 33%
• Roughness 33%
• Demonstrates 33%
• Chemical Vapor Deposition 33%
• Vapor Deposition 33%
• Enhancement 33%
• Ray Diffraction 33%
• Si Substrate 33%
• Small Amount 33%
• Current Drive 33%
• Engineering Strain 33%
• Epitaxial Film 33%

Material Science

• Hole Mobility 100%
• Alloy 100%
• Film 50%
• X-Ray Diffraction 50%
• Surface Roughness 50%
• Chemical Vapor Deposition 50%
• Atomic Force Microscopy 50%
• Strain 50%
• Epitaxial Layer 50%