Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces

Hung Wen Huang; Jung Tang Chu; Chih Chiang Kao; Tao Hung Hsueh; Tien Chang Lu; Hao Chung Kuo; Shing Chung Wang; Chang Chin Yu; Shou Yi Kuo

doi:10.1143/JJAP.45.3442

Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces

Hung Wen Huang, Jung Tang Chu, Chih Chiang Kao, Tao Hung Hsueh, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang^*, Chang Chin Yu, Shou Yi Kuo

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

Abstract

The InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conventional LED. The series resistance of InGaN/GaN LED was reduced by 32% due to the increase in the contact area of the nanoroughened surface.

Original language	English
Pages (from-to)	3442-3445
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.45.3442
State	Published - 25 04 2006
Externally published	Yes

Keywords

Excimer laser
Gallium nitride (GaN)
Light-emitting diode (LED)

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10.1143/JJAP.45.3442

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title = "Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces",

abstract = "The InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conventional LED. The series resistance of InGaN/GaN LED was reduced by 32\% due to the increase in the contact area of the nanoroughened surface.",

keywords = "Excimer laser, Gallium nitride (GaN), Light-emitting diode (LED)",

author = "Huang, \{Hung Wen\} and Chu, \{Jung Tang\} and Kao, \{Chih Chiang\} and Hsueh, \{Tao Hung\} and Lu, \{Tien Chang\} and Kuo, \{Hao Chung\} and Wang, \{Shing Chung\} and Yu, \{Chang Chin\} and Kuo, \{Shou Yi\}",

year = "2006",

month = apr,

day = "25",

doi = "10.1143/JJAP.45.3442",

language = "英语",

volume = "45",

pages = "3442--3445",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "4 B",

}

TY - JOUR

T1 - Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces

AU - Huang, Hung Wen

AU - Chu, Jung Tang

AU - Kao, Chih Chiang

AU - Hsueh, Tao Hung

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Wang, Shing Chung

AU - Yu, Chang Chin

AU - Kuo, Shou Yi

PY - 2006/4/25

Y1 - 2006/4/25

N2 - The InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conventional LED. The series resistance of InGaN/GaN LED was reduced by 32% due to the increase in the contact area of the nanoroughened surface.

AB - The InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conventional LED. The series resistance of InGaN/GaN LED was reduced by 32% due to the increase in the contact area of the nanoroughened surface.

KW - Excimer laser

KW - Gallium nitride (GaN)

KW - Light-emitting diode (LED)

UR - https://www.scopus.com/pages/publications/33646934365

U2 - 10.1143/JJAP.45.3442

DO - 10.1143/JJAP.45.3442

M3 - 文章

AN - SCOPUS:33646934365

SN - 0021-4922

VL - 45

SP - 3442

EP - 3445

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 B

ER -

Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces

Abstract

Keywords

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