Enhanced modulation rate in platinum-diffused resonant-cavity light-emitting diodes

L. B. Chang; D. H. Yeh; L. Z. Hsieh; S. H. Zeng

doi:10.1063/1.2125119

Enhanced modulation rate in platinum-diffused resonant-cavity light-emitting diodes

L. B. Chang^*, D. H. Yeh, L. Z. Hsieh, S. H. Zeng

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

National Defense University Taiwan

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

Abstract

This study is focused on the modulation response of resonant-cavity light-emitting diodes (RCLEDs). Platinum (Pt) atoms are diffused into the 660 nm RCLED epitaxial layers to increase the concentration of recombination centers and to improve the modulation speed. The RCLED has an AlInGaP multi-quantum-well active layer which was embedded into AlGaAs-distributed Bragg reflectors to form a one-wavelength (1-λ) optical resonator. Afterwards, the deep-level Pt impurity was diffused into the RCLED and an improved average rise time, from 18.07 to 12.21 ns, was obtained. The corresponding modulation frequency can be increased from 19.54 to 30.21 MHz.

Original language	English
Article number	093504
Journal	Journal of Applied Physics
Volume	98
Issue number	9
DOIs	https://doi.org/10.1063/1.2125119
State	Published - 01 11 2005

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abstract = "This study is focused on the modulation response of resonant-cavity light-emitting diodes (RCLEDs). Platinum (Pt) atoms are diffused into the 660 nm RCLED epitaxial layers to increase the concentration of recombination centers and to improve the modulation speed. The RCLED has an AlInGaP multi-quantum-well active layer which was embedded into AlGaAs-distributed Bragg reflectors to form a one-wavelength (1-λ) optical resonator. Afterwards, the deep-level Pt impurity was diffused into the RCLED and an improved average rise time, from 18.07 to 12.21 ns, was obtained. The corresponding modulation frequency can be increased from 19.54 to 30.21 MHz.",

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AU - Chang, L. B.

AU - Yeh, D. H.

AU - Hsieh, L. Z.

AU - Zeng, S. H.

PY - 2005/11/1

Y1 - 2005/11/1

N2 - This study is focused on the modulation response of resonant-cavity light-emitting diodes (RCLEDs). Platinum (Pt) atoms are diffused into the 660 nm RCLED epitaxial layers to increase the concentration of recombination centers and to improve the modulation speed. The RCLED has an AlInGaP multi-quantum-well active layer which was embedded into AlGaAs-distributed Bragg reflectors to form a one-wavelength (1-λ) optical resonator. Afterwards, the deep-level Pt impurity was diffused into the RCLED and an improved average rise time, from 18.07 to 12.21 ns, was obtained. The corresponding modulation frequency can be increased from 19.54 to 30.21 MHz.

AB - This study is focused on the modulation response of resonant-cavity light-emitting diodes (RCLEDs). Platinum (Pt) atoms are diffused into the 660 nm RCLED epitaxial layers to increase the concentration of recombination centers and to improve the modulation speed. The RCLED has an AlInGaP multi-quantum-well active layer which was embedded into AlGaAs-distributed Bragg reflectors to form a one-wavelength (1-λ) optical resonator. Afterwards, the deep-level Pt impurity was diffused into the RCLED and an improved average rise time, from 18.07 to 12.21 ns, was obtained. The corresponding modulation frequency can be increased from 19.54 to 30.21 MHz.

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Enhanced modulation rate in platinum-diffused resonant-cavity light-emitting diodes

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