Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high- Ge-content Ge0.5Se0.5 solid electrolyte

Sheikh Ziaur Rahaman, Siddheswar Maikap*, Atanu Das, Amit Prakash, Ya Hsuan Wu, Chao Sung Lai, Ta Chang Tien, Wei Su Chen, Heng Yuan Lee, Frederick T. Chen, Ming Jinn Tsai, Liann Be Chang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

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Chemistry

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