Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2O

Ming Jer Jeng; Jenn Gwo Hwu

doi:10.1063/1.117134

Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N₂O

Ming Jer Jeng^*
, Jenn Gwo Hwu

^*Corresponding author for this work

National Taiwan University

Research output: Contribution to journal › Journal Article › peer-review

11 Scopus citations

Abstract

Room-temperature anodic oxidation (ANO) followed by rapid thermal nitridation in N₂O was used as new method to prepare thin nitrided oxides. It was found that the ANO nitrided oxides demonstrate better interfacial property and breakdown endurance than rapid thermal oxidation (RTO) nitrided oxides. The concentration of nitrogen incorporated in ANO nitrided oxide is larger than that in RTO nitrided oxides. It is believed that the loose density and the existence of hydrogen related species in anodic oxides formed by room-temperature anodization cause nitrogen to diffus easier into oxide and pile up at Si/SiO₂ interface during N₂O nitridation. In addition, the self readjustment of anodization current through the weak path in oxide is beneficial to thin gate oxides.

Original language	English
Pages (from-to)	3875-3877
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	25
DOIs	https://doi.org/10.1063/1.117134
State	Published - 16 12 1996
Externally published	Yes

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title = "Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2O",

abstract = "Room-temperature anodic oxidation (ANO) followed by rapid thermal nitridation in N2O was used as new method to prepare thin nitrided oxides. It was found that the ANO nitrided oxides demonstrate better interfacial property and breakdown endurance than rapid thermal oxidation (RTO) nitrided oxides. The concentration of nitrogen incorporated in ANO nitrided oxide is larger than that in RTO nitrided oxides. It is believed that the loose density and the existence of hydrogen related species in anodic oxides formed by room-temperature anodization cause nitrogen to diffus easier into oxide and pile up at Si/SiO2 interface during N2O nitridation. In addition, the self readjustment of anodization current through the weak path in oxide is beneficial to thin gate oxides.",

author = "Jeng, \{Ming Jer\} and Hwu, \{Jenn Gwo\}",

year = "1996",

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doi = "10.1063/1.117134",

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volume = "69",

pages = "3875--3877",

journal = "Applied Physics Letters",

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T1 - Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2O

AU - Jeng, Ming Jer

AU - Hwu, Jenn Gwo

PY - 1996/12/16

Y1 - 1996/12/16

N2 - Room-temperature anodic oxidation (ANO) followed by rapid thermal nitridation in N2O was used as new method to prepare thin nitrided oxides. It was found that the ANO nitrided oxides demonstrate better interfacial property and breakdown endurance than rapid thermal oxidation (RTO) nitrided oxides. The concentration of nitrogen incorporated in ANO nitrided oxide is larger than that in RTO nitrided oxides. It is believed that the loose density and the existence of hydrogen related species in anodic oxides formed by room-temperature anodization cause nitrogen to diffus easier into oxide and pile up at Si/SiO2 interface during N2O nitridation. In addition, the self readjustment of anodization current through the weak path in oxide is beneficial to thin gate oxides.

AB - Room-temperature anodic oxidation (ANO) followed by rapid thermal nitridation in N2O was used as new method to prepare thin nitrided oxides. It was found that the ANO nitrided oxides demonstrate better interfacial property and breakdown endurance than rapid thermal oxidation (RTO) nitrided oxides. The concentration of nitrogen incorporated in ANO nitrided oxide is larger than that in RTO nitrided oxides. It is believed that the loose density and the existence of hydrogen related species in anodic oxides formed by room-temperature anodization cause nitrogen to diffus easier into oxide and pile up at Si/SiO2 interface during N2O nitridation. In addition, the self readjustment of anodization current through the weak path in oxide is beneficial to thin gate oxides.

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DO - 10.1063/1.117134

M3 - 文章

AN - SCOPUS:0000228733

SN - 0003-6951

VL - 69

SP - 3875

EP - 3877

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N₂O

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