@inproceedings{0f22f8100c2947d7b30108cc5078cdcc,
title = "Enhancement- and depletion-mode InGaP/InGaAs pHEMTs on 6-Inch GaAs substrate",
abstract = "The cost effective enhancement-mode (E-mode) and depletion-mode (D-mode) InGaP/InGaAs pseudomorphic high electron mobility transistors (pHEMTs) on 6-inch GaAs substrate have been developed. The 0.5 μm gate fingers of E-mode and D-mode pHEMTs are deposited simultaneously in this process simplification. This InGaP/InGaAs E-mode pHEMT exhibits a maximum drain-to-source current (I ds) of 460 mA/mm, and a maximum transconductance (gm) of 430 mS/mm. Under 5.2 GHz operation, 216 mW/mm power density, 40 % power added efficiency (PAE) and 0.81 dB minimum noise figure (NFmin) are also achieved for E-mode device. In this study, D-mode pHEMTs are applied for switch monolithic microwave integrated circuit (MMIC) which provides an insertion loss of-1.8 dB and an isolation of -9.2 dB under the 28 dBm input power (P in) and 5.5 GHz operation. From these measured results, this cost effective E/D-mode InGaP/InGaAs pHEMT technology exhibits a highly potential for WLAN applications.",
keywords = "Depletion-mode, Enhancement-mode, InGaP, Switch, pHEMT",
author = "Chiu, {Hsien Chin} and Cheng, {Chia Shih} and Shih Yuan-Jui and Wu, {Chan Shin}",
year = "2005",
doi = "10.1109/APMC.2005.1606443",
language = "英语",
isbn = "078039433X",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
booktitle = "APMC 2005",
note = "APMC 2005: Asia-Pacific Microwave Conference 2005 ; Conference date: 04-12-2005 Through 07-12-2005",
}