Enhancement in Light Extraction of InGaN-Based Micro-hole Array Light-Emitting Diodes by Photoelectrochemical Etching

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2008
Event	International Workshop on Nitride semiconductors 2008 - Montreux, Switzerland Duration: 06 10 2008 → 10 10 2008

Conference	International Workshop on Nitride semiconductors 2008
Period	06/10/08 → 10/10/08

Cite this

@conference{9ec6203b4a7d45ce8266878986a5a22e,

title = "Enhancement in Light Extraction of InGaN-Based Micro-hole Array Light-Emitting Diodes by Photoelectrochemical Etching",

author = "Fang-I Lai and Hsieh, \{C. E.\} and Lin, \{S. G.\} and Shou-Yi Kuo and Kuo, \{H. C.\} and Lu, \{T. C.\} and Wang, \{S. C.\}",

year = "2008",

language = "American English",

note = "International Workshop on Nitride semiconductors 2008 ; Conference date: 06-10-2008 Through 10-10-2008",

}

TY - CONF

T1 - Enhancement in Light Extraction of InGaN-Based Micro-hole Array Light-Emitting Diodes by Photoelectrochemical Etching

AU - Lai, Fang-I

AU - Hsieh, C. E.

AU - Lin, S. G.

AU - Kuo, Shou-Yi

AU - Kuo, H. C.

AU - Lu, T. C.

AU - Wang, S. C.

PY - 2008

Y1 - 2008

M3 - Proceeding

T2 - International Workshop on Nitride semiconductors 2008

Y2 - 6 October 2008 through 10 October 2008

ER -