Enhancement in the extraction efficiency of GaN-based LED with naturally textured surface

Yao Lung Hsieh, S. Y. Kuo, Fang I. Lai*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor deposition (MOCVD) were fabricated. A naturally textured p-GaN surface layer was achieved by controlling the growth temperature. The output power of the naturally textured surface LED with 850 °C growth temperature increased > 50% than the commercial LED. The results show that the naturally textured surface LED could extremely enhance light extraction efficiency and be a candidate for manufacturing high-efficient low-cost GaN-based LEds.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009
StatePublished - 2009
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009 - Shanghai, China
Duration: 30 08 200903 09 2009

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009
Country/TerritoryChina
CityShanghai
Period30/08/0903/09/09

Keywords

  • Extraction efficiency
  • Gallium nitride (GaN)
  • Light-emitting diode (LED)
  • Textured surface

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