Enhancement in the extraction efficiency of GaN-based LED with naturally textured surface

Yao Lung Hsieh; S. Y. Kuo; Fang I. Lai

Enhancement in the extraction efficiency of GaN-based LED with naturally textured surface

Yao Lung Hsieh
, S. Y. Kuo
, Fang I. Lai^*

^*Corresponding author for this work

Department of Electronic Engineering

Yuan Ze University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor deposition (MOCVD) were fabricated. A naturally textured p-GaN surface layer was achieved by controlling the growth temperature. The output power of the naturally textured surface LED with 850 °C growth temperature increased > 50% than the commercial LED. The results show that the naturally textured surface LED could extremely enhance light extraction efficiency and be a candidate for manufacturing high-efficient low-cost GaN-based LEds.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009
State	Published - 2009
Event	Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009 - Shanghai, China Duration: 30 08 2009 → 03 09 2009

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009
Country/Territory	China
City	Shanghai
Period	30/08/09 → 03/09/09

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

Extraction efficiency
Gallium nitride (GaN)
Light-emitting diode (LED)
Textured surface

Cite this

@inproceedings{c2492bcbae0941acacabcee616b27dbe,

title = "Enhancement in the extraction efficiency of GaN-based LED with naturally textured surface",

abstract = "GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor deposition (MOCVD) were fabricated. A naturally textured p-GaN surface layer was achieved by controlling the growth temperature. The output power of the naturally textured surface LED with 850 °C growth temperature increased > 50\% than the commercial LED. The results show that the naturally textured surface LED could extremely enhance light extraction efficiency and be a candidate for manufacturing high-efficient low-cost GaN-based LEds.",

keywords = "Extraction efficiency, Gallium nitride (GaN), Light-emitting diode (LED), Textured surface",

author = "Hsieh, \{Yao Lung\} and Kuo, \{S. Y.\} and Lai, \{Fang I.\}",

year = "2009",

language = "英语",

isbn = "9781424438303",

series = "Optics InfoBase Conference Papers",

booktitle = "Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009",

note = "Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009 ; Conference date: 30-08-2009 Through 03-09-2009",

}

TY - GEN

T1 - Enhancement in the extraction efficiency of GaN-based LED with naturally textured surface

AU - Hsieh, Yao Lung

AU - Kuo, S. Y.

AU - Lai, Fang I.

PY - 2009

Y1 - 2009

N2 - GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor deposition (MOCVD) were fabricated. A naturally textured p-GaN surface layer was achieved by controlling the growth temperature. The output power of the naturally textured surface LED with 850 °C growth temperature increased > 50% than the commercial LED. The results show that the naturally textured surface LED could extremely enhance light extraction efficiency and be a candidate for manufacturing high-efficient low-cost GaN-based LEds.

AB - GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor deposition (MOCVD) were fabricated. A naturally textured p-GaN surface layer was achieved by controlling the growth temperature. The output power of the naturally textured surface LED with 850 °C growth temperature increased > 50% than the commercial LED. The results show that the naturally textured surface LED could extremely enhance light extraction efficiency and be a candidate for manufacturing high-efficient low-cost GaN-based LEds.

KW - Extraction efficiency

KW - Gallium nitride (GaN)

KW - Light-emitting diode (LED)

KW - Textured surface

UR - https://www.scopus.com/pages/publications/84894042672

M3 - 会议稿件

AN - SCOPUS:84894042672

SN - 9781424438303

T3 - Optics InfoBase Conference Papers

BT - Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009

T2 - Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009

Y2 - 30 August 2009 through 3 September 2009

ER -

Enhancement in the extraction efficiency of GaN-based LED with naturally textured surface

Abstract

Publication series

Conference

UN SDGs

Keywords

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