@inproceedings{b40055cc4c054d52ba7df50ea6bfc419,
title = "Enhancement in thermal stability of metal-insulator-metal capacitors for deep trench DRAM application",
abstract = "The high-temperature thermal stability of a metal-insulator-metal (MIM) capacitor has been disclosed and improved by embedding a WN barrier layer between bottom electrodes and high-k dielectrics. The interfacial reaction between high-k dielectrics and bottom electrode during high temperature annealing was suppressed. Therefore, both equivalent oxide thickness (EOT) and leakage current were well controlled to meet the criterion of deep trench DRAM technology beyond 50nm.",
author = "Hsieh, \{Chun I.\} and Pan, \{Tung Ming\} and Huang, \{Tsai Yu\} and Liang, \{Wen Ping\} and Lin, \{Jian Chyi\} and Wu, \{Chang Rong\} and Steven Shih",
year = "2008",
doi = "10.1149/1.2908642",
language = "英语",
isbn = "9781566776271",
series = "ECS Transactions",
number = "2",
pages = "285--289",
booktitle = "ECS Transactions - Dielectrics for Nanosystems 3",
edition = "2",
note = "3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting ; Conference date: 18-05-2008 Through 22-05-2008",
}