Abstract
A vertical Si1-xGex/Si positive metal oxide semiconductor (PMOS) and Si negative metal oxide semiconductor (NMOS) transistors were proposed. The crystalline quality for the strained SiGe layer was examined using high resolution double crystal X-ray diffraction. The linear peak conductance of the SiGe device is greater than the control Si device which indicates that there is an enhancement of out-of-plane hole mobility in a strained SiGe layer.
Original language | English |
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Pages | 128-129 |
Number of pages | 2 |
State | Published - 1997 |
Externally published | Yes |
Event | Proceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA Duration: 23 06 1997 → 25 06 1997 |
Conference
Conference | Proceedings of the 1997 55th Annual Device Research Conference |
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City | Fort Collins, CO, USA |
Period | 23/06/97 → 25/06/97 |