Enhancement of drain current in vertical SiGe/Si PMOS transistors using novel CMOS technology

K. C. Liu; S. K. Ray; S. K. Oswal; N. B. Chakraborti; R. D. Chang; D. L. Kencke; S. K. Banerjee

Enhancement of drain current in vertical SiGe/Si PMOS transistors using novel CMOS technology

K. C. Liu^*
, S. K. Ray
, S. K. Oswal
, N. B. Chakraborti
, R. D. Chang
, D. L. Kencke
, S. K. Banerjee

^*Corresponding author for this work

University of Texas at Austin

Research output: Contribution to conference › Conference Paper › peer-review

3 Scopus citations

Abstract

A vertical Si_1-xGe_x/Si positive metal oxide semiconductor (PMOS) and Si negative metal oxide semiconductor (NMOS) transistors were proposed. The crystalline quality for the strained SiGe layer was examined using high resolution double crystal X-ray diffraction. The linear peak conductance of the SiGe device is greater than the control Si device which indicates that there is an enhancement of out-of-plane hole mobility in a strained SiGe layer.

Original language	English
Pages	128-129
Number of pages	2
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA Duration: 23 06 1997 → 25 06 1997

Conference

Conference	Proceedings of the 1997 55th Annual Device Research Conference
City	Fort Collins, CO, USA
Period	23/06/97 → 25/06/97

Cite this

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title = "Enhancement of drain current in vertical SiGe/Si PMOS transistors using novel CMOS technology",

abstract = "A vertical Si1-xGex/Si positive metal oxide semiconductor (PMOS) and Si negative metal oxide semiconductor (NMOS) transistors were proposed. The crystalline quality for the strained SiGe layer was examined using high resolution double crystal X-ray diffraction. The linear peak conductance of the SiGe device is greater than the control Si device which indicates that there is an enhancement of out-of-plane hole mobility in a strained SiGe layer.",

author = "Liu, \{K. C.\} and Ray, \{S. K.\} and Oswal, \{S. K.\} and Chakraborti, \{N. B.\} and Chang, \{R. D.\} and Kencke, \{D. L.\} and Banerjee, \{S. K.\}",

year = "1997",

language = "英语",

pages = "128--129",

note = "Proceedings of the 1997 55th Annual Device Research Conference ; Conference date: 23-06-1997 Through 25-06-1997",

}

TY - CONF

T1 - Enhancement of drain current in vertical SiGe/Si PMOS transistors using novel CMOS technology

AU - Liu, K. C.

AU - Ray, S. K.

AU - Oswal, S. K.

AU - Chakraborti, N. B.

AU - Chang, R. D.

AU - Kencke, D. L.

AU - Banerjee, S. K.

PY - 1997

Y1 - 1997

N2 - A vertical Si1-xGex/Si positive metal oxide semiconductor (PMOS) and Si negative metal oxide semiconductor (NMOS) transistors were proposed. The crystalline quality for the strained SiGe layer was examined using high resolution double crystal X-ray diffraction. The linear peak conductance of the SiGe device is greater than the control Si device which indicates that there is an enhancement of out-of-plane hole mobility in a strained SiGe layer.

AB - A vertical Si1-xGex/Si positive metal oxide semiconductor (PMOS) and Si negative metal oxide semiconductor (NMOS) transistors were proposed. The crystalline quality for the strained SiGe layer was examined using high resolution double crystal X-ray diffraction. The linear peak conductance of the SiGe device is greater than the control Si device which indicates that there is an enhancement of out-of-plane hole mobility in a strained SiGe layer.

UR - https://www.scopus.com/pages/publications/0030677902

M3 - 论文

AN - SCOPUS:0030677902

SP - 128

EP - 129

T2 - Proceedings of the 1997 55th Annual Device Research Conference

Y2 - 23 June 1997 through 25 June 1997

ER -

Enhancement of drain current in vertical SiGe/Si PMOS transistors using novel CMOS technology

Abstract

Conference

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