Enhancement of photocurrent extraction and electron injection in dual-functional CH3NH3PbBr3 perovskite-based optoelectronic devices via interfacial engineering

Chia Lung Tsai; Yi Chen Lu; Sheng Hsiung Chang

doi:10.1088/1361-6528/aabedd

Enhancement of photocurrent extraction and electron injection in dual-functional CH₃NH₃PbBr₃ perovskite-based optoelectronic devices via interfacial engineering

Chia Lung Tsai^*
, Yi Chen Lu
, Sheng Hsiung Chang

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University
Chung Yuan Christian University

Research output: Contribution to journal › Journal Article › peer-review

15 Scopus citations

Abstract

Photocurrent extraction and electron injection in CH₃NH₃PbBr₃ (MAPbBr₃) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr₃ interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr₃ interface but also increases the crystallinity of the MAPbBr₃ thin films. The optimized dual-functional PCBM-MAPbBr₃ heterojunction based optoelectronic device has a high power conversion efficiency of 4.08% and a bright visible luminescence of 1509 cd m^-2. In addition, the modulation speed of the MAPbBr₃ based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr₃ thin film can be effectively reduced by using the ESA process.

Original language	English
Article number	275704
Journal	Nanotechnology
Volume	29
Issue number	27
DOIs	https://doi.org/10.1088/1361-6528/aabedd
State	Published - 04 05 2018

Bibliographical note

Publisher Copyright:
© 2018 IOP Publishing Ltd.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CHNHPbBr perovskite
PCBM
high-speed devices
interfacial engineering
lightemitting diodes
photovoltaics

Access to Document

10.1088/1361-6528/aabedd

Cite this

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title = "Enhancement of photocurrent extraction and electron injection in dual-functional CH3NH3PbBr3 perovskite-based optoelectronic devices via interfacial engineering",

abstract = "Photocurrent extraction and electron injection in CH3NH3PbBr3 (MAPbBr3) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr3 interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr3 interface but also increases the crystallinity of the MAPbBr3 thin films. The optimized dual-functional PCBM-MAPbBr3 heterojunction based optoelectronic device has a high power conversion efficiency of 4.08\% and a bright visible luminescence of 1509 cd m-2. In addition, the modulation speed of the MAPbBr3 based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr3 thin film can be effectively reduced by using the ESA process.",

keywords = "CHNHPbBr perovskite, PCBM, high-speed devices, interfacial engineering, lightemitting diodes, photovoltaics",

author = "Tsai, \{Chia Lung\} and Lu, \{Yi Chen\} and Chang, \{Sheng Hsiung\}",

note = "Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",

year = "2018",

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doi = "10.1088/1361-6528/aabedd",

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AU - Tsai, Chia Lung

AU - Lu, Yi Chen

AU - Chang, Sheng Hsiung

PY - 2018/5/4

Y1 - 2018/5/4

N2 - Photocurrent extraction and electron injection in CH3NH3PbBr3 (MAPbBr3) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr3 interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr3 interface but also increases the crystallinity of the MAPbBr3 thin films. The optimized dual-functional PCBM-MAPbBr3 heterojunction based optoelectronic device has a high power conversion efficiency of 4.08% and a bright visible luminescence of 1509 cd m-2. In addition, the modulation speed of the MAPbBr3 based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr3 thin film can be effectively reduced by using the ESA process.

AB - Photocurrent extraction and electron injection in CH3NH3PbBr3 (MAPbBr3) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr3 interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr3 interface but also increases the crystallinity of the MAPbBr3 thin films. The optimized dual-functional PCBM-MAPbBr3 heterojunction based optoelectronic device has a high power conversion efficiency of 4.08% and a bright visible luminescence of 1509 cd m-2. In addition, the modulation speed of the MAPbBr3 based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr3 thin film can be effectively reduced by using the ESA process.

KW - CHNHPbBr perovskite

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KW - high-speed devices

KW - interfacial engineering

KW - lightemitting diodes

KW - photovoltaics

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