Enhancement/Depletion-mode AlGaN/GaN HEMTs demonstration using partial p-type GaN gate etching process

Kai Di Mai; Hou Yu Wang; Li Yi Peng; Yuan Hsiang Cheng; Hsien Chin Chiu; H. L. Kao

doi:10.1109/EDSSC.2015.7285206

Enhancement/Depletion-mode AlGaN/GaN HEMTs demonstration using partial p-type GaN gate etching process

Kai Di Mai, Hou Yu Wang, Li Yi Peng, Yuan Hsiang Cheng, Hsien Chin Chiu, H. L. Kao

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, we design a 70nm Mg doped GaN stacked on standard GaN HEMTs structure, the concentration is 5×10¹⁹ cm^-3. The enhancement mode GaN HEMTs was sequential manufactured following by standard semiconductor procedure. The V_th, maximum Ids, and g_m peak were +0.8V, 242.3 mA/mm, and 45.3 mS/mm, respectively. Low frequency noise, C-V measurement, and pulse measurement were analyzed to comprehend this device.

Original language	English
Title of host publication	Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	676-678
Number of pages	3
ISBN (Electronic)	9781479983636
DOIs	https://doi.org/10.1109/EDSSC.2015.7285206
State	Published - 30 09 2015
Event	11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 - Singapore, Singapore Duration: 01 06 2015 → 04 06 2015

Publication series

Name	Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

Conference

Conference	11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
Country/Territory	Singapore
City	Singapore
Period	01/06/15 → 04/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Access to Document

10.1109/EDSSC.2015.7285206

Cite this

Mai, K. D., Wang, H. Y., Peng, L. Y., Cheng, Y. H., Chiu, H. C., & Kao, H. L. (2015). Enhancement/Depletion-mode AlGaN/GaN HEMTs demonstration using partial p-type GaN gate etching process. In Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 (pp. 676-678). Article 7285206 (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2015.7285206

Mai, Kai Di ; Wang, Hou Yu ; Peng, Li Yi et al. / Enhancement/Depletion-mode AlGaN/GaN HEMTs demonstration using partial p-type GaN gate etching process. Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 676-678 (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015).

@inproceedings{0b3f7809719e46dd8807680948c9f50d,

title = "Enhancement/Depletion-mode AlGaN/GaN HEMTs demonstration using partial p-type GaN gate etching process",

abstract = "In this work, we design a 70nm Mg doped GaN stacked on standard GaN HEMTs structure, the concentration is 5×1019 cm-3. The enhancement mode GaN HEMTs was sequential manufactured following by standard semiconductor procedure. The Vth, maximum Ids, and gm peak were +0.8V, 242.3 mA/mm, and 45.3 mS/mm, respectively. Low frequency noise, C-V measurement, and pulse measurement were analyzed to comprehend this device.",

author = "Mai, {Kai Di} and Wang, {Hou Yu} and Peng, {Li Yi} and Cheng, {Yuan Hsiang} and Chiu, {Hsien Chin} and Kao, {H. L.}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 ; Conference date: 01-06-2015 Through 04-06-2015",

year = "2015",

month = sep,

day = "30",

doi = "10.1109/EDSSC.2015.7285206",

language = "英语",

series = "Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "676--678",

booktitle = "Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015",

address = "美国",

}

Mai, KD, Wang, HY, Peng, LY, Cheng, YH, Chiu, HC & Kao, HL 2015, Enhancement/Depletion-mode AlGaN/GaN HEMTs demonstration using partial p-type GaN gate etching process. in Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015., 7285206, Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015, Institute of Electrical and Electronics Engineers Inc., pp. 676-678, 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015, Singapore, Singapore, 01/06/15. https://doi.org/10.1109/EDSSC.2015.7285206

Enhancement/Depletion-mode AlGaN/GaN HEMTs demonstration using partial p-type GaN gate etching process. / Mai, Kai Di; Wang, Hou Yu; Peng, Li Yi et al.
Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 676-678 7285206 (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Enhancement/Depletion-mode AlGaN/GaN HEMTs demonstration using partial p-type GaN gate etching process

AU - Mai, Kai Di

AU - Wang, Hou Yu

AU - Peng, Li Yi

AU - Cheng, Yuan Hsiang

AU - Chiu, Hsien Chin

AU - Kao, H. L.

PY - 2015/9/30

Y1 - 2015/9/30

N2 - In this work, we design a 70nm Mg doped GaN stacked on standard GaN HEMTs structure, the concentration is 5×1019 cm-3. The enhancement mode GaN HEMTs was sequential manufactured following by standard semiconductor procedure. The Vth, maximum Ids, and gm peak were +0.8V, 242.3 mA/mm, and 45.3 mS/mm, respectively. Low frequency noise, C-V measurement, and pulse measurement were analyzed to comprehend this device.

AB - In this work, we design a 70nm Mg doped GaN stacked on standard GaN HEMTs structure, the concentration is 5×1019 cm-3. The enhancement mode GaN HEMTs was sequential manufactured following by standard semiconductor procedure. The Vth, maximum Ids, and gm peak were +0.8V, 242.3 mA/mm, and 45.3 mS/mm, respectively. Low frequency noise, C-V measurement, and pulse measurement were analyzed to comprehend this device.

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BT - Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

Y2 - 1 June 2015 through 4 June 2015

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Mai KD, Wang HY, Peng LY, Cheng YH, Chiu HC , Kao HL. Enhancement/Depletion-mode AlGaN/GaN HEMTs demonstration using partial p-type GaN gate etching process. In Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 676-678. 7285206. (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015). doi: 10.1109/EDSSC.2015.7285206

Enhancement/Depletion-mode AlGaN/GaN HEMTs demonstration using partial p-type GaN gate etching process

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