Abstract
Epitaxial semipolar InN(1013) crystals were grown on a LaAlO3(112) substrate using radio frequency plasma-assisted molecular beam epitaxy without any interlayer. The lattice mismatch between InN and LaAlO3 was estimated to be -7.75% along the [1210]InN direction and 0.2% along the [3032]InN direction. The InN film is epitaxic with the LaAlO3 substrate, with orientation relationships between InN(1013)|| LaAlO3(112) and [1210]InN || [111]LAO. InN grown on LaAlO3(112) appears (1013) plane orientated, with two types of domains. Semipolar InN(1013) layers can be grown at 510 °C and show X-ray rocking curve FWHMs of 1830 and 1408 arcsec for InN(0002) and InN(1013), respectively. However, InN grown at 510 °C has the highest peak intensity and the narrowest FWHM of the prepared samples, indicating high-quality crystal growth.
Original language | English |
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Article number | 055505 |
Journal | Japanese Journal of Applied Physics |
Volume | 56 |
Issue number | 5 |
DOIs | |
State | Published - 05 2017 |
Bibliographical note
Publisher Copyright:© 2017 The Japan Society of Applied Physics.