Epitaxial growth of semipolar InN(1013) on LaAlO3 substrate: Epitaxial relationship analysis

Wei Chun Chen, Shou Yi Kuo, S. Tian, Wei Lin Wang, Fang I. Lai, Yue Han Wu, Li Chang

Research output: Contribution to journalJournal Article peer-review


Epitaxial semipolar InN(1013) crystals were grown on a LaAlO3(112) substrate using radio frequency plasma-assisted molecular beam epitaxy without any interlayer. The lattice mismatch between InN and LaAlO3 was estimated to be -7.75% along the [1210]InN direction and 0.2% along the [3032]InN direction. The InN film is epitaxic with the LaAlO3 substrate, with orientation relationships between InN(1013)|| LaAlO3(112) and [1210]InN || [111]LAO. InN grown on LaAlO3(112) appears (1013) plane orientated, with two types of domains. Semipolar InN(1013) layers can be grown at 510 °C and show X-ray rocking curve FWHMs of 1830 and 1408 arcsec for InN(0002) and InN(1013), respectively. However, InN grown at 510 °C has the highest peak intensity and the narrowest FWHM of the prepared samples, indicating high-quality crystal growth.

Original languageEnglish
Article number055505
JournalJapanese Journal of Applied Physics
Issue number5
StatePublished - 05 2017

Bibliographical note

Publisher Copyright:
© 2017 The Japan Society of Applied Physics.


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