Etching selectivity and surface profile of GaN in the Ni, SiO2 and photoresist masks using an inductively coupled plasma

L. B. Chang*, S. S. Liu, M. J. Jeng

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

39 Scopus citations

Abstract

The selectivity and etched surface profile for etching GaN using an inductively coupled plasma (ICP) in Ni, SiO2 and photoresist masks were investigated. The mask etching rates in the Ni, SiO2 and photoresist masks were 26, 70 and 245 nm/min, respectively, for a RF power of 500 W, an ICP power of 600 W and an etching gas ratio of BCl3/Ar/N2 = 15 : 5 : 10 (sccm). A high selectivity of 15 in the Ni mask was found to be higher than that of 5.6 and 1.65 in the SiO2 and photoresist masks, respectively. The best etching surface profile was also obtained in the Ni mask in comparison with the SiO2 or photoresist mask.

Original languageEnglish
Pages (from-to)1242-1243
Number of pages2
JournalJapanese Journal of Applied Physics
Volume40
Issue number3 A
DOIs
StatePublished - 03 2001
Externally publishedYes

Keywords

  • Etched surface profile
  • GaN
  • Inductively coupled plasma (ICP)
  • Selectivity

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