Evaluation of silicon nitride MIM capacitors for MMIC applications

Wu Shiung Feng, Yi Jung Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

With the rapid development and huge requirements of wireless communication systems, microwave-monolithic Integrated circuits (MMIC) with high performance and reliability have become very popular and been developed rapidly. The nitride quality and the reliability of the metal-insulator-metal (MIM) capacitor can be also researched based on time-dependent dielectric breakdown (TDDB) theory. In this paper, the various Si3N4 capacitors having different area sizes, aspect ratios and corners were designed with respect to nitride quality and lifetime evaluation.

Original languageEnglish
Title of host publicationAdvanced Design and Manufacturing Technology III
Pages1873-1877
Number of pages5
DOIs
StatePublished - 2013
Event3rd International Conference on Advanced Design and Manufacturing Engineering, ADME 2013 - Anshan, China
Duration: 13 07 201314 07 2013

Publication series

NameApplied Mechanics and Materials
Volume397-400
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482

Conference

Conference3rd International Conference on Advanced Design and Manufacturing Engineering, ADME 2013
Country/TerritoryChina
CityAnshan
Period13/07/1314/07/13

Keywords

  • Metal-insulator-metal (MIM) capacitors
  • Ramped voltage stress
  • Time dependent dielectric breakdown

Fingerprint

Dive into the research topics of 'Evaluation of silicon nitride MIM capacitors for MMIC applications'. Together they form a unique fingerprint.

Cite this