Excellent electrical and reliability characteristics of 11 Å oxynitride gate dielectrics by remote plasma nitridation treatment

Tung Ming Pan

doi:10.1063/1.2185612

Excellent electrical and reliability characteristics of 11 Å oxynitride gate dielectrics by remote plasma nitridation treatment

Tung Ming Pan^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

Ultrathin oxynitride gate dielectrics of similar thickness (∼1.1 nm) fabricated by a rapid thermal NO-nitrided oxide (RTNO), a RTNO with remote plasma nitridation (RPN) treatment (RTNO-RPN), an in situ steam generated (ISSG) NO oxide, and an ISSG with RPN treatment (ISSG-RPN) are investigated. The results demonstrate that ISSG-RPN gate dielectrics exhibit superior interface properties, reduced leakage current, and improved reliability compared to other gate dielectrics. The ISSG-RPN oxynitride film is an attractive candidate as the advanced gate dielectrics in future generations of ultralarge scale integration complementary metal-oxide semiconductor technologies.

Original language	English
Article number	112904
Journal	Applied Physics Letters
Volume	88
Issue number	11
DOIs	https://doi.org/10.1063/1.2185612
State	Published - 2006

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10.1063/1.2185612

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title = "Excellent electrical and reliability characteristics of 11 {\AA} oxynitride gate dielectrics by remote plasma nitridation treatment",

abstract = "Ultrathin oxynitride gate dielectrics of similar thickness (∼1.1 nm) fabricated by a rapid thermal NO-nitrided oxide (RTNO), a RTNO with remote plasma nitridation (RPN) treatment (RTNO-RPN), an in situ steam generated (ISSG) NO oxide, and an ISSG with RPN treatment (ISSG-RPN) are investigated. The results demonstrate that ISSG-RPN gate dielectrics exhibit superior interface properties, reduced leakage current, and improved reliability compared to other gate dielectrics. The ISSG-RPN oxynitride film is an attractive candidate as the advanced gate dielectrics in future generations of ultralarge scale integration complementary metal-oxide semiconductor technologies.",

author = "Pan, {Tung Ming}",

year = "2006",

doi = "10.1063/1.2185612",

language = "英语",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

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T1 - Excellent electrical and reliability characteristics of 11 Å oxynitride gate dielectrics by remote plasma nitridation treatment

AU - Pan, Tung Ming

PY - 2006

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AB - Ultrathin oxynitride gate dielectrics of similar thickness (∼1.1 nm) fabricated by a rapid thermal NO-nitrided oxide (RTNO), a RTNO with remote plasma nitridation (RPN) treatment (RTNO-RPN), an in situ steam generated (ISSG) NO oxide, and an ISSG with RPN treatment (ISSG-RPN) are investigated. The results demonstrate that ISSG-RPN gate dielectrics exhibit superior interface properties, reduced leakage current, and improved reliability compared to other gate dielectrics. The ISSG-RPN oxynitride film is an attractive candidate as the advanced gate dielectrics in future generations of ultralarge scale integration complementary metal-oxide semiconductor technologies.

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U2 - 10.1063/1.2185612

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M3 - 文章

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SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112904

ER -

Excellent electrical and reliability characteristics of 11 Å oxynitride gate dielectrics by remote plasma nitridation treatment

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