Excellent electrical characteristics of praseodymium oxide dielectrics on Si substrate by reactive RF sputtering

Tung Ming Pan; Chun I. Hsieh; Feng Ji Tsai; Tin Wei Wu

doi:10.1149/1.2727407

Excellent electrical characteristics of praseodymium oxide dielectrics on Si substrate by reactive RF sputtering

Tung Ming Pan^*, Chun I. Hsieh, Feng Ji Tsai, Tin Wei Wu

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Praseodymium oxide film was grown on Si substrate by reactive RF-sputtering from a Pr target for TaN metal gate. We found that Pr₂O₃ gate dielectric with TaN metal gate annealed at 700°C exhibits a higher capacitance value and lower flatband voltage in C-V curves, and shows the leakage value of ∼5×10^-7 A/cm² at a bias of 2 V. This Pr₂O₃ gate dielectric appears to be very promising for future ultra-large scale integration devices.

Original language	English
Title of host publication	ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS
Subtitle of host publication	New Materials, Processes and Equipment, 3
Publisher	Electrochemical Society Inc.
Pages	247-250
Number of pages	4
Edition	1
ISBN (Electronic)	9781566775502
ISBN (Print)	9781566775502
DOIs	https://doi.org/10.1149/1.2727407
State	Published - 2007
Event	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting - Chicago, IL, United States Duration: 06 05 2007 → 10 05 2007

Publication series

Name	ECS Transactions
Number	1
Volume	6
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting
Country/Territory	United States
City	Chicago, IL
Period	06/05/07 → 10/05/07

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10.1149/1.2727407

Cite this

Pan, T. M., Hsieh, C. I., Tsai, F. J., & Wu, T. W. (2007). Excellent electrical characteristics of praseodymium oxide dielectrics on Si substrate by reactive RF sputtering. In ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 (1 ed., pp. 247-250). (ECS Transactions; Vol. 6, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/1.2727407

Pan, Tung Ming ; Hsieh, Chun I. ; Tsai, Feng Ji et al. / Excellent electrical characteristics of praseodymium oxide dielectrics on Si substrate by reactive RF sputtering. ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1. ed. Electrochemical Society Inc., 2007. pp. 247-250 (ECS Transactions; 1).

@inproceedings{93573bfb4dfd4a288d59083b8f78c1ba,

title = "Excellent electrical characteristics of praseodymium oxide dielectrics on Si substrate by reactive RF sputtering",

abstract = "Praseodymium oxide film was grown on Si substrate by reactive RF-sputtering from a Pr target for TaN metal gate. We found that Pr2O3 gate dielectric with TaN metal gate annealed at 700°C exhibits a higher capacitance value and lower flatband voltage in C-V curves, and shows the leakage value of ∼5×10-7 A/cm2 at a bias of 2 V. This Pr2O3 gate dielectric appears to be very promising for future ultra-large scale integration devices.",

author = "Pan, {Tung Ming} and Hsieh, {Chun I.} and Tsai, {Feng Ji} and Wu, {Tin Wei}",

year = "2007",

doi = "10.1149/1.2727407",

language = "英语",

isbn = "9781566775502",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "1",

pages = "247--250",

booktitle = "ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS",

edition = "1",

note = "International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",

}

Pan, TM, Hsieh, CI, Tsai, FJ & Wu, TW 2007, Excellent electrical characteristics of praseodymium oxide dielectrics on Si substrate by reactive RF sputtering. in ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1 edn, ECS Transactions, no. 1, vol. 6, Electrochemical Society Inc., pp. 247-250, International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting, Chicago, IL, United States, 06/05/07. https://doi.org/10.1149/1.2727407

Excellent electrical characteristics of praseodymium oxide dielectrics on Si substrate by reactive RF sputtering. / Pan, Tung Ming; Hsieh, Chun I.; Tsai, Feng Ji et al.
ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1. ed. Electrochemical Society Inc., 2007. p. 247-250 (ECS Transactions; Vol. 6, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Pan, Tung Ming

AU - Hsieh, Chun I.

AU - Tsai, Feng Ji

AU - Wu, Tin Wei

PY - 2007

Y1 - 2007

N2 - Praseodymium oxide film was grown on Si substrate by reactive RF-sputtering from a Pr target for TaN metal gate. We found that Pr2O3 gate dielectric with TaN metal gate annealed at 700°C exhibits a higher capacitance value and lower flatband voltage in C-V curves, and shows the leakage value of ∼5×10-7 A/cm2 at a bias of 2 V. This Pr2O3 gate dielectric appears to be very promising for future ultra-large scale integration devices.

AB - Praseodymium oxide film was grown on Si substrate by reactive RF-sputtering from a Pr target for TaN metal gate. We found that Pr2O3 gate dielectric with TaN metal gate annealed at 700°C exhibits a higher capacitance value and lower flatband voltage in C-V curves, and shows the leakage value of ∼5×10-7 A/cm2 at a bias of 2 V. This Pr2O3 gate dielectric appears to be very promising for future ultra-large scale integration devices.

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DO - 10.1149/1.2727407

M3 - 会议稿件

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SN - 9781566775502

T3 - ECS Transactions

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BT - ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS

PB - Electrochemical Society Inc.

T2 - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting

Y2 - 6 May 2007 through 10 May 2007

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Pan TM, Hsieh CI, Tsai FJ, Wu TW. Excellent electrical characteristics of praseodymium oxide dielectrics on Si substrate by reactive RF sputtering. In ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1 ed. Electrochemical Society Inc. 2007. p. 247-250. (ECS Transactions; 1). doi: 10.1149/1.2727407

Excellent electrical characteristics of praseodymium oxide dielectrics on Si substrate by reactive RF sputtering

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