Excellent resistive switching memory: Influence of GeO x in WO x mixture

S. Z. Rahaman; S. Maikap; W. S. Chen; T. C. Tien; H. Y. Lee; F. T. Chen; M. J. Kao; M. J. Tsai

doi:10.1109/VLSI-TSA.2012.6210124

Excellent resistive switching memory: Influence of GeO _x in WO _x mixture

S. Z. Rahaman^*, S. Maikap, W. S. Chen, T. C. Tien, H. Y. Lee, F. T. Chen, M. J. Kao, M. J. Tsai

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Influence of GeO _x layer on resistive switching memory performance in a simple and CMOS compatible W/WO _x/GeO _x:WO _x mixture/W structure has been investigated for the first time. All layers are confirmed by both HRTEM and XPS. This memory device has enhanced performance in terms of the resistance ratio, uniformity, and program/erase cycles as compared to W/WO _x/W structure. An excellent read endurance and program/erase cycles of >10 ⁶ at large V _read of ±1V are obtained. Furthermore, the memory device exhibits robust data retention at 85°C. This device can be operated as low current as 0.1 μA.

Original language	English
Title of host publication	2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers
DOIs	https://doi.org/10.1109/VLSI-TSA.2012.6210124
State	Published - 2012
Event	2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Hsinchu, Taiwan Duration: 23 04 2012 → 25 04 2012

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)	1930-8868

Conference

Conference	2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012
Country/Territory	Taiwan
City	Hsinchu
Period	23/04/12 → 25/04/12

Access to Document

10.1109/VLSI-TSA.2012.6210124

Cite this

Rahaman, S. Z., Maikap, S., Chen, W. S., Tien, T. C., Lee, H. Y., Chen, F. T., Kao, M. J., & Tsai, M. J. (2012). Excellent resistive switching memory: Influence of GeO _x in WO _x mixture. In 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers Article 6210124 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VLSI-TSA.2012.6210124

@inproceedings{7b37a0c494e346f8a461e19effa1522d,

title = "Excellent resistive switching memory: Influence of GeO x in WO x mixture",

abstract = "Influence of GeO x layer on resistive switching memory performance in a simple and CMOS compatible W/WO x/GeO x:WO x mixture/W structure has been investigated for the first time. All layers are confirmed by both HRTEM and XPS. This memory device has enhanced performance in terms of the resistance ratio, uniformity, and program/erase cycles as compared to W/WO x/W structure. An excellent read endurance and program/erase cycles of >10 6 at large V read of ±1V are obtained. Furthermore, the memory device exhibits robust data retention at 85°C. This device can be operated as low current as 0.1 μA.",

author = "Rahaman, {S. Z.} and S. Maikap and Chen, {W. S.} and Tien, {T. C.} and Lee, {H. Y.} and Chen, {F. T.} and Kao, {M. J.} and Tsai, {M. J.}",

year = "2012",

doi = "10.1109/VLSI-TSA.2012.6210124",

language = "英语",

isbn = "9781457720840",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

booktitle = "2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers",

note = "2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 ; Conference date: 23-04-2012 Through 25-04-2012",

}

Rahaman, SZ, Maikap, S, Chen, WS, Tien, TC, Lee, HY, Chen, FT, Kao, MJ & Tsai, MJ 2012, Excellent resistive switching memory: Influence of GeO _x in WO _x mixture. in 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers., 6210124, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012, Hsinchu, Taiwan, 23/04/12. https://doi.org/10.1109/VLSI-TSA.2012.6210124

Excellent resistive switching memory: Influence of GeO _x in WO _x mixture. / Rahaman, S. Z.; Maikap, S.; Chen, W. S. et al.
2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 2012. 6210124 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Rahaman, S. Z.

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AB - Influence of GeO x layer on resistive switching memory performance in a simple and CMOS compatible W/WO x/GeO x:WO x mixture/W structure has been investigated for the first time. All layers are confirmed by both HRTEM and XPS. This memory device has enhanced performance in terms of the resistance ratio, uniformity, and program/erase cycles as compared to W/WO x/W structure. An excellent read endurance and program/erase cycles of >10 6 at large V read of ±1V are obtained. Furthermore, the memory device exhibits robust data retention at 85°C. This device can be operated as low current as 0.1 μA.

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Rahaman SZ, Maikap S, Chen WS, Tien TC, Lee HY, Chen FT et al. Excellent resistive switching memory: Influence of GeO _x in WO _x mixture. In 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers. 2012. 6210124. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VLSI-TSA.2012.6210124