Experimental and simulation studies of solid-phase crystallization of fluorine-implanted amorphous silicon on silicon dioxide

Chia Chi Ma, Fu Han Hsieh, Yeh Wei Wu, Ruey Dar Chang*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

Abstract

In this study, we investigated how fluorine implantation affects the crystallization of amorphous silicon (a-Si) prepared by low-pressure chemical vapor deposition. Fluorine and silicon ions were implanted at the center of the a-Si and a-Si/SiO2 interface to identify whether the effect is caused by implantation damage or fluorine incorporation into the thin film. Two-dimensional Monte-Carlo simulation was performed to clarify crystallization mechanisms. The microstructures obtained experimentally were reproduced by the simulation. Experimental and simulation results indicate that damage caused by fluorine implanted at the a-Si/SiO2 interface increased the energy barrier to stable nuclei formation, causing a significant reduction in the nucleation rate. Fluorine incorporation into the a-Si film reduced the growth rate as fluorine was implanted at the film center.

Original languageEnglish
Article number091403
JournalJapanese Journal of Applied Physics
Volume50
Issue number9 PART 1
DOIs
StatePublished - 09 2011

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