Abstract
In this work, we successfully demonstrate the transparent polymer light emitting diodes (PLEDs) with LiF/Ag/indium tin oxide (ITO) cathode that can efficiently improve the operation voltage and enhance light output. The devices with Ag insertion layer all perform the lower turn-on voltage in the range from 4.8 to 5.8 V at 1 mA/cm2. Furthermore, these devices all show the superior luminance than the device without Ag buffer layer. However, the transparency of cathode is strongly dependent on the Ag thickness. Devices with a 1 nm-thick layer Ag exhibits a higher transparency than other devices with Ag layers, thus showing the highest luminance from the top cathode. In addition, the Ag insertion layer also plays a role to prevent the emitting layer from sputtering bombard damage. According to X-ray photoemission spectroscopy (XPS) measurement, it is observed that the Ag layer will sufficiently protect the emitting layer from sputtering penetration damage under a sputtering power of 50 W. In this paper, we present a practical structure for realizing transparent PLEDs.
Original language | English |
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Pages (from-to) | 2704-2708 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics |
Volume | 46 |
Issue number | 4 B |
DOIs | |
State | Published - 24 04 2007 |
Keywords
- Ag
- Buffer layer
- ITO cathode
- Low sputtering damage
- Transparent PLEDs