Abstract
Boron segregation toward implanted arsenic profile in Si during annealing was investigated under various annealing conditions. It is found that both implantation damage and arsenic deactivation enhance the diffusion of the embedded boron layer toward the As implanted profile. The boron segregation is caused by the electric field resulting from the formation of p-n junction. The location of boron segregation peak depends on annealing temperature and As profiles. 2-D simulation shows device degradation due to boron segregation caused by As deactivation.
| Original language | English |
|---|---|
| Pages (from-to) | 497-500 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting, IEDM |
| State | Published - 1997 |
| Externally published | Yes |
| Event | 1997 International Electron Devices Meeting - Washington, DC, USA Duration: 07 12 1997 → 10 12 1997 |