Extended titanium nitride gate field-effect transistor with PVC selective membrane for hydrogen and potassium ion detection

Hau Cheng Wang; Tsung Cheng Chen; Hao Yang; Pi Chun Juan; Chia Ming Yang; Chao Sung Lai

doi:10.1109/INEC.2014.7460458

Extended titanium nitride gate field-effect transistor with PVC selective membrane for hydrogen and potassium ion detection

Hau Cheng Wang
, Tsung Cheng Chen
, Hao Yang
, Pi Chun Juan
, Chia Ming Yang
, Chao Sung Lai

Chang Gung University
Ming Chi University of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A 50 nm-thick TiN sensing membrane with nitrogen (N2) ratio modification was firstly used in EGFET for pH sensing. The highest pH sensitivity of 61 mV/pH with linearity of 99.9% could be found in N2 to N2+Ar ratio of 20%. Similar performance could be maintained at least for 250 days. With additional PVC selective membrane of K+ ionophore, sensitivity could be increased to 48.7mV/pK. This developed TiN EGFET could be a potential candidate for pH and pK sensing application.

Original language	English
Title of host publication	2014 IEEE International Nanoelectronics Conference, INEC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479950379
DOIs	https://doi.org/10.1109/INEC.2014.7460458
State	Published - 26 04 2016
Event	IEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan Duration: 28 07 2014 → 31 07 2014

Publication series

Name	2014 IEEE International Nanoelectronics Conference, INEC 2014

Conference

Conference	IEEE International Nanoelectronics Conference, INEC 2014
Country/Territory	Japan
City	Sapporo
Period	28/07/14 → 31/07/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Keywords

EGFET
N2 ratio
PVC
Potassium
TiN

Access to Document

10.1109/INEC.2014.7460458

Cite this

Wang, H. C., Chen, T. C., Yang, H., Juan, P. C., Yang, C. M., & Lai, C. S. (2016). Extended titanium nitride gate field-effect transistor with PVC selective membrane for hydrogen and potassium ion detection. In 2014 IEEE International Nanoelectronics Conference, INEC 2014 Article 7460458 (2014 IEEE International Nanoelectronics Conference, INEC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INEC.2014.7460458

Wang, Hau Cheng ; Chen, Tsung Cheng ; Yang, Hao et al. / Extended titanium nitride gate field-effect transistor with PVC selective membrane for hydrogen and potassium ion detection. 2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc., 2016. (2014 IEEE International Nanoelectronics Conference, INEC 2014).

@inproceedings{d0cd7280f3004e90afec1fb58b84612f,

title = "Extended titanium nitride gate field-effect transistor with PVC selective membrane for hydrogen and potassium ion detection",

abstract = "A 50 nm-thick TiN sensing membrane with nitrogen (N2) ratio modification was firstly used in EGFET for pH sensing. The highest pH sensitivity of 61 mV/pH with linearity of 99.9\% could be found in N2 to N2+Ar ratio of 20\%. Similar performance could be maintained at least for 250 days. With additional PVC selective membrane of K+ ionophore, sensitivity could be increased to 48.7mV/pK. This developed TiN EGFET could be a potential candidate for pH and pK sensing application.",

keywords = "EGFET, N2 ratio, PVC, Potassium, TiN",

author = "Wang, \{Hau Cheng\} and Chen, \{Tsung Cheng\} and Hao Yang and Juan, \{Pi Chun\} and Yang, \{Chia Ming\} and Lai, \{Chao Sung\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; IEEE International Nanoelectronics Conference, INEC 2014 ; Conference date: 28-07-2014 Through 31-07-2014",

year = "2016",

month = apr,

day = "26",

doi = "10.1109/INEC.2014.7460458",

language = "英语",

series = "2014 IEEE International Nanoelectronics Conference, INEC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2014 IEEE International Nanoelectronics Conference, INEC 2014",

address = "美国",

}

Wang, HC, Chen, TC, Yang, H, Juan, PC, Yang, CM & Lai, CS 2016, Extended titanium nitride gate field-effect transistor with PVC selective membrane for hydrogen and potassium ion detection. in 2014 IEEE International Nanoelectronics Conference, INEC 2014., 7460458, 2014 IEEE International Nanoelectronics Conference, INEC 2014, Institute of Electrical and Electronics Engineers Inc., IEEE International Nanoelectronics Conference, INEC 2014, Sapporo, Japan, 28/07/14. https://doi.org/10.1109/INEC.2014.7460458

Extended titanium nitride gate field-effect transistor with PVC selective membrane for hydrogen and potassium ion detection. / Wang, Hau Cheng; Chen, Tsung Cheng; Yang, Hao et al.
2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc., 2016. 7460458 (2014 IEEE International Nanoelectronics Conference, INEC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Extended titanium nitride gate field-effect transistor with PVC selective membrane for hydrogen and potassium ion detection

AU - Wang, Hau Cheng

AU - Chen, Tsung Cheng

AU - Yang, Hao

AU - Juan, Pi Chun

AU - Yang, Chia Ming

AU - Lai, Chao Sung

PY - 2016/4/26

Y1 - 2016/4/26

N2 - A 50 nm-thick TiN sensing membrane with nitrogen (N2) ratio modification was firstly used in EGFET for pH sensing. The highest pH sensitivity of 61 mV/pH with linearity of 99.9% could be found in N2 to N2+Ar ratio of 20%. Similar performance could be maintained at least for 250 days. With additional PVC selective membrane of K+ ionophore, sensitivity could be increased to 48.7mV/pK. This developed TiN EGFET could be a potential candidate for pH and pK sensing application.

AB - A 50 nm-thick TiN sensing membrane with nitrogen (N2) ratio modification was firstly used in EGFET for pH sensing. The highest pH sensitivity of 61 mV/pH with linearity of 99.9% could be found in N2 to N2+Ar ratio of 20%. Similar performance could be maintained at least for 250 days. With additional PVC selective membrane of K+ ionophore, sensitivity could be increased to 48.7mV/pK. This developed TiN EGFET could be a potential candidate for pH and pK sensing application.

KW - EGFET

KW - N2 ratio

KW - PVC

KW - Potassium

KW - TiN

UR - https://www.scopus.com/pages/publications/84971284006

U2 - 10.1109/INEC.2014.7460458

DO - 10.1109/INEC.2014.7460458

M3 - 会议稿件

AN - SCOPUS:84971284006

T3 - 2014 IEEE International Nanoelectronics Conference, INEC 2014

BT - 2014 IEEE International Nanoelectronics Conference, INEC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE International Nanoelectronics Conference, INEC 2014

Y2 - 28 July 2014 through 31 July 2014

ER -

Wang HC, Chen TC, Yang H, Juan PC, Yang CM, Lai CS. Extended titanium nitride gate field-effect transistor with PVC selective membrane for hydrogen and potassium ion detection. In 2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc. 2016. 7460458. (2014 IEEE International Nanoelectronics Conference, INEC 2014). doi: 10.1109/INEC.2014.7460458

Extended titanium nitride gate field-effect transistor with PVC selective membrane for hydrogen and potassium ion detection

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Keywords

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