Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

Chuan H. Liu; Hsiu Shan Lin; Yu Yin Lin; M. G. Chen; T. M. Pan; C. J. Kao; K. T. Huang; S. H. Lin; Y. C. Sheng; Wen Tung Chang; J. H. Lee; M. Huang; Chiung Sheng Hsiung; S. Huang-Lu; Chen Chung Hsu; Alan Y. Liang; Jenkon Chen; W. Y. Hsieh; P. W. Yen; S. C. Chien; Y. T. Loh; Yih J. Chang; Fu Tai Liou

Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N₂O-grown oxides and NO RTA treatment

Chuan H. Liu^*, Hsiu Shan Lin, Yu Yin Lin, M. G. Chen, T. M. Pan, C. J. Kao, K. T. Huang, S. H. Lin, Y. C. Sheng, Wen Tung Chang, J. H. Lee, M. Huang, Chiung Sheng Hsiung, S. Huang-Lu, Chen Chung Hsu, Alan Y. Liang, Jenkon Chen, W. Y. Hsieh, P. W. Yen, S. C. ChienY. T. Loh, Yih J. Chang, Fu Tai Liou

^*Corresponding author for this work

United Microelectronics Corporation

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

A gate dielectric process was developed by remote plasma nitridation of N₂O oxides with rapid thermal NO annealing. Superior interface properties, reduced leakage current and improved reliability was shown by the films. The stress induced leakage current (SILC) was shown as a function of stress time under constant voltage stress of 2.6 V in inversion mode and stress temperature of 160°C.

Original language	English
Pages (from-to)	268-271
Number of pages	4
Journal	Annual Proceedings - Reliability Physics (Symposium)
State	Published - 2002
Externally published	Yes
Event	Proceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings - Dallas, TX, United States Duration: 07 04 2002 → 11 04 2002

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Liu, C. H., Lin, H. S., Lin, Y. Y., Chen, M. G., Pan, T. M., Kao, C. J., Huang, K. T., Lin, S. H., Sheng, Y. C., Chang, W. T., Lee, J. H., Huang, M., Hsiung, C. S., Huang-Lu, S., Hsu, C. C., Liang, A. Y., Chen, J., Hsieh, W. Y., Yen, P. W., ... Liou, F. T. (2002). Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N₂O-grown oxides and NO RTA treatment. Annual Proceedings - Reliability Physics (Symposium), 268-271.

@article{f308df6406dc41e2bf9659bb7e0af3ff,

title = "Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment",

abstract = "A gate dielectric process was developed by remote plasma nitridation of N2O oxides with rapid thermal NO annealing. Superior interface properties, reduced leakage current and improved reliability was shown by the films. The stress induced leakage current (SILC) was shown as a function of stress time under constant voltage stress of 2.6 V in inversion mode and stress temperature of 160°C.",

author = "Liu, {Chuan H.} and Lin, {Hsiu Shan} and Lin, {Yu Yin} and Chen, {M. G.} and Pan, {T. M.} and Kao, {C. J.} and Huang, {K. T.} and Lin, {S. H.} and Sheng, {Y. C.} and Chang, {Wen Tung} and Lee, {J. H.} and M. Huang and Hsiung, {Chiung Sheng} and S. Huang-Lu and Hsu, {Chen Chung} and Liang, {Alan Y.} and Jenkon Chen and Hsieh, {W. Y.} and Yen, {P. W.} and Chien, {S. C.} and Loh, {Y. T.} and Chang, {Yih J.} and Liou, {Fu Tai}",

year = "2002",

language = "英语",

pages = "268--271",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "Proceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings ; Conference date: 07-04-2002 Through 11-04-2002",

}

Liu, CH, Lin, HS, Lin, YY, Chen, MG, Pan, TM, Kao, CJ, Huang, KT, Lin, SH, Sheng, YC, Chang, WT, Lee, JH, Huang, M, Hsiung, CS, Huang-Lu, S, Hsu, CC, Liang, AY, Chen, J, Hsieh, WY, Yen, PW, Chien, SC, Loh, YT, Chang, YJ & Liou, FT 2002, 'Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N₂O-grown oxides and NO RTA treatment', Annual Proceedings - Reliability Physics (Symposium), pp. 268-271.

TY - JOUR

T1 - Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

AU - Liu, Chuan H.

AU - Lin, Hsiu Shan

AU - Lin, Yu Yin

AU - Chen, M. G.

AU - Pan, T. M.

AU - Kao, C. J.

AU - Huang, K. T.

AU - Lin, S. H.

AU - Sheng, Y. C.

AU - Chang, Wen Tung

AU - Lee, J. H.

AU - Huang, M.

AU - Hsiung, Chiung Sheng

AU - Huang-Lu, S.

AU - Hsu, Chen Chung

AU - Liang, Alan Y.

AU - Chen, Jenkon

AU - Hsieh, W. Y.

AU - Yen, P. W.

AU - Chien, S. C.

AU - Loh, Y. T.

AU - Chang, Yih J.

AU - Liou, Fu Tai

PY - 2002

Y1 - 2002

N2 - A gate dielectric process was developed by remote plasma nitridation of N2O oxides with rapid thermal NO annealing. Superior interface properties, reduced leakage current and improved reliability was shown by the films. The stress induced leakage current (SILC) was shown as a function of stress time under constant voltage stress of 2.6 V in inversion mode and stress temperature of 160°C.

AB - A gate dielectric process was developed by remote plasma nitridation of N2O oxides with rapid thermal NO annealing. Superior interface properties, reduced leakage current and improved reliability was shown by the films. The stress induced leakage current (SILC) was shown as a function of stress time under constant voltage stress of 2.6 V in inversion mode and stress temperature of 160°C.

UR - http://www.scopus.com/inward/record.url?scp=0036088459&partnerID=8YFLogxK

M3 - 会议文章

AN - SCOPUS:0036088459

SN - 0099-9512

SP - 268

EP - 271

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

T2 - Proceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings

Y2 - 7 April 2002 through 11 April 2002

ER -

Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N₂O-grown oxides and NO RTA treatment

Abstract

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