Fabrication and characterization of 650 nm resonant-cavity light-emitting diodes

Chia Lung Tsai; Chih Wei Ho; Chun Yuan Huang; Feng Ming Lee; Meng Chyi Wu; Hai Lin Wang; Sum Chien Ko; Wen Jeng Ho; Jet Huang; J. R. Deng

doi:10.1116/1.1800358

Fabrication and characterization of 650 nm resonant-cavity light-emitting diodes

Chia Lung Tsai
, Chih Wei Ho
, Chun Yuan Huang
, Feng Ming Lee
, Meng Chyi Wu^*
, Hai Lin Wang
, Sum Chien Ko
, Wen Jeng Ho
, Jet Huang
, J. R. Deng

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

5 Scopus citations

Abstract

The fabrication and characterization of 650 nm AlGaInP resonant-cavity light-emitting diodes (RCLEDs) was studied. For the experiment, the AlGaInP epitaxial structures were grown on Si-doped n-type GaAs substrates. Photolithography, metallization, and bonding techniques were used to fabricate the devices with surface emitting geometry. All the devices were found to exhibit a low operating voltage ranging from 1.9 to 2.0 v at 20 mA which was attributed to carbon doping. The RCLED with a window diameter of 120 μm exhibited the maximum light output power of 0.79mw at 39 mA.

Original language	English
Pages (from-to)	2518-2521
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	5
DOIs	https://doi.org/10.1116/1.1800358
State	Published - 09 2004
Externally published	Yes

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title = "Fabrication and characterization of 650 nm resonant-cavity light-emitting diodes",

abstract = "The fabrication and characterization of 650 nm AlGaInP resonant-cavity light-emitting diodes (RCLEDs) was studied. For the experiment, the AlGaInP epitaxial structures were grown on Si-doped n-type GaAs substrates. Photolithography, metallization, and bonding techniques were used to fabricate the devices with surface emitting geometry. All the devices were found to exhibit a low operating voltage ranging from 1.9 to 2.0 v at 20 mA which was attributed to carbon doping. The RCLED with a window diameter of 120 μm exhibited the maximum light output power of 0.79mw at 39 mA.",

author = "Tsai, \{Chia Lung\} and Ho, \{Chih Wei\} and Huang, \{Chun Yuan\} and Lee, \{Feng Ming\} and Wu, \{Meng Chyi\} and Wang, \{Hai Lin\} and Ko, \{Sum Chien\} and Ho, \{Wen Jeng\} and Jet Huang and Deng, \{J. R.\}",

year = "2004",

month = sep,

doi = "10.1116/1.1800358",

language = "英语",

volume = "22",

pages = "2518--2521",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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TY - JOUR

T1 - Fabrication and characterization of 650 nm resonant-cavity light-emitting diodes

AU - Tsai, Chia Lung

AU - Ho, Chih Wei

AU - Huang, Chun Yuan

AU - Lee, Feng Ming

AU - Wu, Meng Chyi

AU - Wang, Hai Lin

AU - Ko, Sum Chien

AU - Ho, Wen Jeng

AU - Huang, Jet

AU - Deng, J. R.

PY - 2004/9

Y1 - 2004/9

N2 - The fabrication and characterization of 650 nm AlGaInP resonant-cavity light-emitting diodes (RCLEDs) was studied. For the experiment, the AlGaInP epitaxial structures were grown on Si-doped n-type GaAs substrates. Photolithography, metallization, and bonding techniques were used to fabricate the devices with surface emitting geometry. All the devices were found to exhibit a low operating voltage ranging from 1.9 to 2.0 v at 20 mA which was attributed to carbon doping. The RCLED with a window diameter of 120 μm exhibited the maximum light output power of 0.79mw at 39 mA.

AB - The fabrication and characterization of 650 nm AlGaInP resonant-cavity light-emitting diodes (RCLEDs) was studied. For the experiment, the AlGaInP epitaxial structures were grown on Si-doped n-type GaAs substrates. Photolithography, metallization, and bonding techniques were used to fabricate the devices with surface emitting geometry. All the devices were found to exhibit a low operating voltage ranging from 1.9 to 2.0 v at 20 mA which was attributed to carbon doping. The RCLED with a window diameter of 120 μm exhibited the maximum light output power of 0.79mw at 39 mA.

UR - https://www.scopus.com/pages/publications/9744268956

U2 - 10.1116/1.1800358

DO - 10.1116/1.1800358

M3 - 文章

AN - SCOPUS:9744268956

SN - 1071-1023

VL - 22

SP - 2518

EP - 2521

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

ER -

Fabrication and characterization of 650 nm resonant-cavity light-emitting diodes

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