Fabrication and characterization of amorphous In-Zn-O/SiOx/n-Si heterojunction solar cells

Hau Wei Fang; Shiu Jen Liu; Tsung Eong Hsieh; Jenh Yih Juang; Jang Hsing Hsieh

doi:10.1016/j.solener.2011.07.016

Fabrication and characterization of amorphous In-Zn-O/SiO_x/n-Si heterojunction solar cells

Hau Wei Fang
, Shiu Jen Liu^*
, Tsung Eong Hsieh
, Jenh Yih Juang
, Jang Hsing Hsieh

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

11 Scopus citations

Abstract

Amorphous In-Zn-O (a-IZO) films were deposited on SiO_x covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiO_x/n-Si heterojunction solar cells. The a-IZO films grown at 150°C with various laser power (250-500mJ/pulse) exhibit low resistivity (2-3×10^-3Ωcm) and high transparency (∼80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiO_x/n-Si solar cells is 2.2% under 100mW/cm² illumination (AM1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24V, 28.4mA/cm² and 33.6%, respectively.

Original language	English
Pages (from-to)	2589-2594
Number of pages	6
Journal	Solar Energy
Volume	85
Issue number	11
DOIs	https://doi.org/10.1016/j.solener.2011.07.016
State	Published - 11 2011
Externally published	Yes

Keywords

Amorphous In-Zn-O film
Photovoltaic characteristics
Pulsed laser deposition
Semiconductor-insulator-semiconductor solar cell

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solener.2011.07.016

Cite this

@article{335a05ff88414f0a85a9e45aee3fee16,

title = "Fabrication and characterization of amorphous In-Zn-O/SiOx/n-Si heterojunction solar cells",

abstract = "Amorphous In-Zn-O (a-IZO) films were deposited on SiOx covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiOx/n-Si heterojunction solar cells. The a-IZO films grown at 150°C with various laser power (250-500mJ/pulse) exhibit low resistivity (2-3×10-3Ωcm) and high transparency (∼80\%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiOx/n-Si solar cells is 2.2\% under 100mW/cm2 illumination (AM1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24V, 28.4mA/cm2 and 33.6\%, respectively.",

keywords = "Amorphous In-Zn-O film, Photovoltaic characteristics, Pulsed laser deposition, Semiconductor-insulator-semiconductor solar cell",

author = "Fang, \{Hau Wei\} and Liu, \{Shiu Jen\} and Hsieh, \{Tsung Eong\} and Juang, \{Jenh Yih\} and Hsieh, \{Jang Hsing\}",

year = "2011",

month = nov,

doi = "10.1016/j.solener.2011.07.016",

language = "英语",

volume = "85",

pages = "2589--2594",

journal = "Solar Energy",

issn = "0038-092X",

publisher = "Elsevier Ltd",

number = "11",

}

TY - JOUR

T1 - Fabrication and characterization of amorphous In-Zn-O/SiOx/n-Si heterojunction solar cells

AU - Fang, Hau Wei

AU - Liu, Shiu Jen

AU - Hsieh, Tsung Eong

AU - Juang, Jenh Yih

AU - Hsieh, Jang Hsing

PY - 2011/11

Y1 - 2011/11

N2 - Amorphous In-Zn-O (a-IZO) films were deposited on SiOx covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiOx/n-Si heterojunction solar cells. The a-IZO films grown at 150°C with various laser power (250-500mJ/pulse) exhibit low resistivity (2-3×10-3Ωcm) and high transparency (∼80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiOx/n-Si solar cells is 2.2% under 100mW/cm2 illumination (AM1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24V, 28.4mA/cm2 and 33.6%, respectively.

AB - Amorphous In-Zn-O (a-IZO) films were deposited on SiOx covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiOx/n-Si heterojunction solar cells. The a-IZO films grown at 150°C with various laser power (250-500mJ/pulse) exhibit low resistivity (2-3×10-3Ωcm) and high transparency (∼80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiOx/n-Si solar cells is 2.2% under 100mW/cm2 illumination (AM1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24V, 28.4mA/cm2 and 33.6%, respectively.

KW - Amorphous In-Zn-O film

KW - Photovoltaic characteristics

KW - Pulsed laser deposition

KW - Semiconductor-insulator-semiconductor solar cell

UR - https://www.scopus.com/pages/publications/80053973149

U2 - 10.1016/j.solener.2011.07.016

DO - 10.1016/j.solener.2011.07.016

M3 - 文章

AN - SCOPUS:80053973149

SN - 0038-092X

VL - 85

SP - 2589

EP - 2594

JO - Solar Energy

JF - Solar Energy

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ER -