Fabrication and simulation of antireflective nanostructures on c-Si solar cells

Ming Hsuan Kao, Ting Gang Chen, Min An Tsai, Hsin Chu Chen, Fang I. Lai, Shou Yi Kuo*, Pi Chen Yu, Hao Chung Kuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The enhanced photoelectric conversion is demonstrated in nanostructured photovoltaics using colloidal lithography and reactive-ion-etching (RIE) techniques. From the reflectance spectroscopy, trapezoid-cone arrays (TCAs) Si with SiNx passivation layer effectively suppress the reflection in the wavelength range from 400 nm to 1000 nm. The power conversion shows the TCAs Si solar cell with 120 nm thickness of SiNx passivation layer achieves 13.736%, which is 8.87% and 2.56% enhancement compared to the conventional KOH-textured photovoltaics and TCAs with 80-nm-thick SiNx, respectively. An optical simulation based on RCWA describes the optimized shape of nanostructure to further reduce reflectance for maximum light absorption.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
Pages1529-1531
Number of pages3
StatePublished - 2011
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, Australia
Duration: 28 08 201101 09 2011

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
Country/TerritoryAustralia
CitySydney
Period28/08/1101/09/11

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