Fabrication of a far-infrared photodetector based on InAs/GaAs quantum-dot superlattices

Yi Chang Cheng; San Te Ching Ming Yang; Jyh Neng Yang; Wen How Lan; Liann Be Chang; Li Zen Hsieh

doi:10.1117/1.1525277

Fabrication of a far-infrared photodetector based on InAs/GaAs quantum-dot superlattices

Yi Chang Cheng^*
, San Te Ching Ming Yang
, Jyh Neng Yang
, Wen How Lan
, Liann Be Chang
, Li Zen Hsieh

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

8 Scopus citations

Abstract

A far-infrared photodetector based on twenty layers of self-assembled InAs/GaAs quantum dot superlattices is fabricated. Measurements by Fourier-transform infrared spectroscopy at 77 K reveal that the response of the device is in the range of 9 to 16.3 μm, with a peak absorption wavelength near 13.2 μm (756 cm^-1). The electrical characteristic of the device's current-voltage response is 63 μA at -1-V bias voltage when a 1-cd light source is at 15-cm distance.

Original language	English
Pages (from-to)	119-123
Number of pages	5
Journal	Optical Engineering
Volume	42
Issue number	1
DOIs	https://doi.org/10.1117/1.1525277
State	Published - 01 2003
Externally published	Yes

Keywords

FTIR
InAs/GaAs
Photodetector
Quantum dots
Superlattice

Access to Document

10.1117/1.1525277

Cite this

@article{37d50996b8de4a3ca7bca58fd9b7d585,

title = "Fabrication of a far-infrared photodetector based on InAs/GaAs quantum-dot superlattices",

abstract = "A far-infrared photodetector based on twenty layers of self-assembled InAs/GaAs quantum dot superlattices is fabricated. Measurements by Fourier-transform infrared spectroscopy at 77 K reveal that the response of the device is in the range of 9 to 16.3 μm, with a peak absorption wavelength near 13.2 μm (756 cm-1). The electrical characteristic of the device's current-voltage response is 63 μA at -1-V bias voltage when a 1-cd light source is at 15-cm distance.",

keywords = "FTIR, InAs/GaAs, Photodetector, Quantum dots, Superlattice",

author = "Cheng, \{Yi Chang\} and Yang, \{San Te Ching Ming\} and Yang, \{Jyh Neng\} and Lan, \{Wen How\} and Chang, \{Liann Be\} and Hsieh, \{Li Zen\}",

year = "2003",

month = jan,

doi = "10.1117/1.1525277",

language = "英语",

volume = "42",

pages = "119--123",

journal = "Optical Engineering",

issn = "0091-3286",

publisher = "SPIE",

number = "1",

}

TY - JOUR

T1 - Fabrication of a far-infrared photodetector based on InAs/GaAs quantum-dot superlattices

AU - Cheng, Yi Chang

AU - Yang, San Te Ching Ming

AU - Yang, Jyh Neng

AU - Lan, Wen How

AU - Chang, Liann Be

AU - Hsieh, Li Zen

PY - 2003/1

Y1 - 2003/1

N2 - A far-infrared photodetector based on twenty layers of self-assembled InAs/GaAs quantum dot superlattices is fabricated. Measurements by Fourier-transform infrared spectroscopy at 77 K reveal that the response of the device is in the range of 9 to 16.3 μm, with a peak absorption wavelength near 13.2 μm (756 cm-1). The electrical characteristic of the device's current-voltage response is 63 μA at -1-V bias voltage when a 1-cd light source is at 15-cm distance.

AB - A far-infrared photodetector based on twenty layers of self-assembled InAs/GaAs quantum dot superlattices is fabricated. Measurements by Fourier-transform infrared spectroscopy at 77 K reveal that the response of the device is in the range of 9 to 16.3 μm, with a peak absorption wavelength near 13.2 μm (756 cm-1). The electrical characteristic of the device's current-voltage response is 63 μA at -1-V bias voltage when a 1-cd light source is at 15-cm distance.

KW - FTIR

KW - InAs/GaAs

KW - Photodetector

KW - Quantum dots

KW - Superlattice

UR - https://www.scopus.com/pages/publications/0037254303

U2 - 10.1117/1.1525277

DO - 10.1117/1.1525277

M3 - 文章

AN - SCOPUS:0037254303

SN - 0091-3286

VL - 42

SP - 119

EP - 123

JO - Optical Engineering

JF - Optical Engineering

IS - 1

ER -

Fabrication of a far-infrared photodetector based on InAs/GaAs quantum-dot superlattices

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this