TY - JOUR
T1 - Fabrication of nanostructured indium nitride by PA-MOMBE
AU - Kuo, Shou Yi
AU - Chen, Wei Chun
AU - Kei, C. C.
AU - Hsiao, C. N.
PY - 2008/5/1
Y1 - 2008/5/1
N2 - Nanostructured indium nitride (InN) films have been prepared on the c-plane sapphire substrate by a plasma-assisted metal-organic molecular beam epitaxy (PA-MOMBE) system. We have investigated the influence of growth temperature on the surface morphology and crystal structures by atomic force microscopy, scanning electron microscopy and energy dispersive spectroscopy. A pronounced two-dimensional growth mode was observed at a growth temperature of 500 °C, and these films showed high orientation along the c-plane. As the growth temperature reached 700 °C, (InN) 1D nanostructures were formed and exhibited randomly oriented crystalline nature. Furthermore, the enhancement of the indium atoms' surface mobility at high growth temperature might be crucial to the formation of InN nanonails and nanorods. Meanwhile, no metallic droplet was observed at the end of the nanostructured InN, which is the intrinsic feature of the vapor-liquid-solid method. These results indicate that the control of the growth condition is essential for engineering the growth of InN on Al2O3 (0 0 1), and it might also be applicable for other lattice-mismatched III-V heteroepitaxial systems.
AB - Nanostructured indium nitride (InN) films have been prepared on the c-plane sapphire substrate by a plasma-assisted metal-organic molecular beam epitaxy (PA-MOMBE) system. We have investigated the influence of growth temperature on the surface morphology and crystal structures by atomic force microscopy, scanning electron microscopy and energy dispersive spectroscopy. A pronounced two-dimensional growth mode was observed at a growth temperature of 500 °C, and these films showed high orientation along the c-plane. As the growth temperature reached 700 °C, (InN) 1D nanostructures were formed and exhibited randomly oriented crystalline nature. Furthermore, the enhancement of the indium atoms' surface mobility at high growth temperature might be crucial to the formation of InN nanonails and nanorods. Meanwhile, no metallic droplet was observed at the end of the nanostructured InN, which is the intrinsic feature of the vapor-liquid-solid method. These results indicate that the control of the growth condition is essential for engineering the growth of InN on Al2O3 (0 0 1), and it might also be applicable for other lattice-mismatched III-V heteroepitaxial systems.
UR - http://www.scopus.com/inward/record.url?scp=43149097819&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/23/5/055013
DO - 10.1088/0268-1242/23/5/055013
M3 - 文章
AN - SCOPUS:43149097819
SN - 0268-1242
VL - 23
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 5
M1 - 055013
ER -