Facet degradation of aged strained quantum-well lasers studied by high-voltage electron-beam-induced current

M. C. Wang; D. M. Hwang; P. S.D. Lin; L. Dechiaro; C. E. Zah; S. Ovadia; T. P. Lee; D. Darby

doi:10.1063/1.111346

Facet degradation of aged strained quantum-well lasers studied by high-voltage electron-beam-induced current

M. C. Wang^*
, D. M. Hwang
, P. S.D. Lin
, L. Dechiaro
, C. E. Zah
, S. Ovadia
, T. P. Lee
, D. Darby

^*Corresponding author for this work

Telcordia Technologies
Lasertron

Research output: Contribution to journal › Journal Article › peer-review

11 Scopus citations

Abstract

High-voltage electron-beam-induced-current imaging is used to study the aging of two sets of commercial 0.98 μm lasers with identical strained quantum wells (In_0.2Ga_0.8As) but different cladding layers (Al_0.55Ga_0.45As versus In_0.49Ga _0.51P) on GaAs substrates. We observed the development of facet defects only in the InGaAs/AlGaAs lasers which also exhibited larger threshold-current increases. It therefore suggests that this facet degradation mode is related to the cladding layer composition, not to the strains in the active layer.

Original language	English
Pages (from-to)	3145-3147
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	23
DOIs	https://doi.org/10.1063/1.111346
State	Published - 1994
Externally published	Yes

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title = "Facet degradation of aged strained quantum-well lasers studied by high-voltage electron-beam-induced current",

abstract = "High-voltage electron-beam-induced-current imaging is used to study the aging of two sets of commercial 0.98 μm lasers with identical strained quantum wells (In0.2Ga0.8As) but different cladding layers (Al0.55Ga0.45As versus In0.49Ga 0.51P) on GaAs substrates. We observed the development of facet defects only in the InGaAs/AlGaAs lasers which also exhibited larger threshold-current increases. It therefore suggests that this facet degradation mode is related to the cladding layer composition, not to the strains in the active layer.",

author = "Wang, \{M. C.\} and Hwang, \{D. M.\} and Lin, \{P. S.D.\} and L. Dechiaro and Zah, \{C. E.\} and S. Ovadia and Lee, \{T. P.\} and D. Darby",

year = "1994",

doi = "10.1063/1.111346",

language = "英语",

volume = "64",

pages = "3145--3147",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Facet degradation of aged strained quantum-well lasers studied by high-voltage electron-beam-induced current

AU - Wang, M. C.

AU - Hwang, D. M.

AU - Lin, P. S.D.

AU - Dechiaro, L.

AU - Zah, C. E.

AU - Ovadia, S.

AU - Lee, T. P.

AU - Darby, D.

PY - 1994

Y1 - 1994

N2 - High-voltage electron-beam-induced-current imaging is used to study the aging of two sets of commercial 0.98 μm lasers with identical strained quantum wells (In0.2Ga0.8As) but different cladding layers (Al0.55Ga0.45As versus In0.49Ga 0.51P) on GaAs substrates. We observed the development of facet defects only in the InGaAs/AlGaAs lasers which also exhibited larger threshold-current increases. It therefore suggests that this facet degradation mode is related to the cladding layer composition, not to the strains in the active layer.

AB - High-voltage electron-beam-induced-current imaging is used to study the aging of two sets of commercial 0.98 μm lasers with identical strained quantum wells (In0.2Ga0.8As) but different cladding layers (Al0.55Ga0.45As versus In0.49Ga 0.51P) on GaAs substrates. We observed the development of facet defects only in the InGaAs/AlGaAs lasers which also exhibited larger threshold-current increases. It therefore suggests that this facet degradation mode is related to the cladding layer composition, not to the strains in the active layer.

UR - https://www.scopus.com/pages/publications/0028766445

U2 - 10.1063/1.111346

DO - 10.1063/1.111346

M3 - 文章

AN - SCOPUS:0028766445

SN - 0003-6951

VL - 64

SP - 3145

EP - 3147

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Facet degradation of aged strained quantum-well lasers studied by high-voltage electron-beam-induced current

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