Failure analysis of bond pad metal peeling using FIB and AFM

Cher Ming Tan; Eddie Er; Younan Hua; Vincent Chai

doi:10.1109/95.740051

Failure analysis of bond pad metal peeling using FIB and AFM

Cher Ming Tan^*
, Eddie Er
, Younan Hua
, Vincent Chai

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Journal Article › peer-review

17 Scopus citations

Abstract

Aluminum bond pads on semiconductor chips play an important role in chips functionality and reliability. Bond pad peeling during wire bonding process results in yield reduction. The failure mechanisms of the peeling must be identified so that potential reliability problem of poor bond pad adhesion can be avoided. In this work, FIB, SEM, EDX, and AFM are used to identify the root causes of the peeling. The possible root causes are found to be the presence of an extra layer of thickness of 0.14 μm and the poly-silicon surface roughness asperity due to prolonged BOE etching time.

Original language	English
Pages (from-to)	585-591
Number of pages	7
Journal	IEEE transactions on components, packaging, and manufacturing technology. Part A
Volume	21
Issue number	4
DOIs	https://doi.org/10.1109/95.740051 https://doi.org/10.1109/95.740049
State	Published - 1998
Externally published	Yes

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title = "Failure analysis of bond pad metal peeling using FIB and AFM",

abstract = "Aluminum bond pads on semiconductor chips play an important role in chips functionality and reliability. Bond pad peeling during wire bonding process results in yield reduction. The failure mechanisms of the peeling must be identified so that potential reliability problem of poor bond pad adhesion can be avoided. In this work, FIB, SEM, EDX, and AFM are used to identify the root causes of the peeling. The possible root causes are found to be the presence of an extra layer of thickness of 0.14 μm and the poly-silicon surface roughness asperity due to prolonged BOE etching time.",

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AU - Er, Eddie

AU - Hua, Younan

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N2 - Aluminum bond pads on semiconductor chips play an important role in chips functionality and reliability. Bond pad peeling during wire bonding process results in yield reduction. The failure mechanisms of the peeling must be identified so that potential reliability problem of poor bond pad adhesion can be avoided. In this work, FIB, SEM, EDX, and AFM are used to identify the root causes of the peeling. The possible root causes are found to be the presence of an extra layer of thickness of 0.14 μm and the poly-silicon surface roughness asperity due to prolonged BOE etching time.

AB - Aluminum bond pads on semiconductor chips play an important role in chips functionality and reliability. Bond pad peeling during wire bonding process results in yield reduction. The failure mechanisms of the peeling must be identified so that potential reliability problem of poor bond pad adhesion can be avoided. In this work, FIB, SEM, EDX, and AFM are used to identify the root causes of the peeling. The possible root causes are found to be the presence of an extra layer of thickness of 0.14 μm and the poly-silicon surface roughness asperity due to prolonged BOE etching time.

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JO - IEEE transactions on components, packaging, and manufacturing technology. Part A

JF - IEEE transactions on components, packaging, and manufacturing technology. Part A

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ER -

Failure analysis of bond pad metal peeling using FIB and AFM

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