Fast high-κ AIN MONOS memory with large memory window and good retention

C. H. Lai; C. C. Huang; K. C. Chiang; H. L. Kao; W. J. Chen; Albert Chin; C. C. Chi

doi:10.1109/DRC.2005.1553074

Fast high-κ AIN MONOS memory with large memory window and good retention

C. H. Lai^*
, C. C. Huang
, K. C. Chiang
, H. L. Kao
, W. J. Chen
, Albert Chin
, C. C. Chi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

We have obtained good non-volatile memory device integrity of fast 100μs program and 1ms erase time at ±13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85°C in the new IrO₂-HfAlO-AIN-SiO₂-Si MONOS device.

Original language	English
Title of host publication	63rd Device Research Conference Digest, DRC'05
Pages	99-100
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2005.1553074
State	Published - 2005
Externally published	Yes
Event	63rd Device Research Conference, DRC'05 - Santa Clara, CA, United States Duration: 20 06 2005 → 22 06 2005

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2005
ISSN (Print)	1548-3770

Conference

Conference	63rd Device Research Conference, DRC'05
Country/Territory	United States
City	Santa Clara, CA
Period	20/06/05 → 22/06/05

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10.1109/DRC.2005.1553074

Cite this

@inproceedings{19ae90c4cfbd40dba808f226b1a81ed8,

title = "Fast high-κ AIN MONOS memory with large memory window and good retention",

abstract = "We have obtained good non-volatile memory device integrity of fast 100μs program and 1ms erase time at ±13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85°C in the new IrO2-HfAlO-AIN-SiO2-Si MONOS device.",

author = "Lai, \{C. H.\} and Huang, \{C. C.\} and Chiang, \{K. C.\} and Kao, \{H. L.\} and Chen, \{W. J.\} and Albert Chin and Chi, \{C. C.\}",

year = "2005",

doi = "10.1109/DRC.2005.1553074",

language = "英语",

isbn = "0780390407",

series = "Device Research Conference - Conference Digest, DRC",

pages = "99--100",

booktitle = "63rd Device Research Conference Digest, DRC'05",

note = "63rd Device Research Conference, DRC'05 ; Conference date: 20-06-2005 Through 22-06-2005",

}

Lai, CH, Huang, CC, Chiang, KC, Kao, HL, Chen, WJ, Chin, A & Chi, CC 2005, Fast high-κ AIN MONOS memory with large memory window and good retention. in 63rd Device Research Conference Digest, DRC'05., 1553074, Device Research Conference - Conference Digest, DRC, vol. 2005, pp. 99-100, 63rd Device Research Conference, DRC'05, Santa Clara, CA, United States, 20/06/05. https://doi.org/10.1109/DRC.2005.1553074

TY - GEN

T1 - Fast high-κ AIN MONOS memory with large memory window and good retention

AU - Lai, C. H.

AU - Huang, C. C.

AU - Chiang, K. C.

AU - Kao, H. L.

AU - Chen, W. J.

AU - Chin, Albert

AU - Chi, C. C.

PY - 2005

Y1 - 2005

N2 - We have obtained good non-volatile memory device integrity of fast 100μs program and 1ms erase time at ±13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85°C in the new IrO2-HfAlO-AIN-SiO2-Si MONOS device.

AB - We have obtained good non-volatile memory device integrity of fast 100μs program and 1ms erase time at ±13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85°C in the new IrO2-HfAlO-AIN-SiO2-Si MONOS device.

UR - https://www.scopus.com/pages/publications/33751349495

U2 - 10.1109/DRC.2005.1553074

DO - 10.1109/DRC.2005.1553074

M3 - 会议稿件

AN - SCOPUS:33751349495

SN - 0780390407

SN - 9780780390409

T3 - Device Research Conference - Conference Digest, DRC

SP - 99

EP - 100

BT - 63rd Device Research Conference Digest, DRC'05

T2 - 63rd Device Research Conference, DRC'05

Y2 - 20 June 2005 through 22 June 2005

ER -

Fast high-κ AIN MONOS memory with large memory window and good retention

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