Fast surge suppression by inserting an AlGaN/GaN-based varactor

L. B. Chang; S. C. Wang; S. L. Lin; M. Das; Y. C. Ferng; M. J. Cheng; S. T. Chou; L. Chow

doi:10.1109/CECNet.2012.6202003

Fast surge suppression by inserting an AlGaN/GaN-based varactor

L. B. Chang^*, S. C. Wang, S. L. Lin, M. Das, Y. C. Ferng, M. J. Cheng, S. T. Chou, L. Chow

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this report, a metal-semiconductor-metal varactor diodes on top of an AlGaN/GaN-based epitaxial structure is proposed to the fast surge protection application. The fabricated device's capacitance-voltage (C-V) property and surge immunity are presented. In addition, to verify its capability for slow and fast surge absorption, three protection configurations; the gas discharge arrestor (GDA) only, in a state-of-the-art surge protection circuit, and the proposed circuit with AlGaN/GaN-based varactor were all under the system-level lightning and Electrostatic Discharge surge tests. The measured results show that the proposed fast surge protection circuit can suppress a fast intrusive pulse (FIP) voltage of 4000 V to 360 V, a reduction of 91 %; whereas that suppresses to 1780 V only, a reduction of 55 %, by using a traditional GDA only.

Original language	English
Title of host publication	2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 - Proceedings
Pages	3251-3253
Number of pages	3
DOIs	https://doi.org/10.1109/CECNet.2012.6202003
State	Published - 2012
Event	2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 - Three Gorges, China Duration: 21 04 2012 → 23 04 2012

Publication series

Name	2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 - Proceedings

Conference

Conference	2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012
Country/Territory	China
City	Three Gorges
Period	21/04/12 → 23/04/12

Keywords

AlGaN/GaN-based varactor
Fast intrusive pulse (FIP)
Surge protection
metal-semiconductor-metal (MSM) structure

Access to Document

10.1109/CECNet.2012.6202003

Cite this

Chang, L. B., Wang, S. C., Lin, S. L., Das, M., Ferng, Y. C., Cheng, M. J., Chou, S. T., & Chow, L. (2012). Fast surge suppression by inserting an AlGaN/GaN-based varactor. In 2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 - Proceedings (pp. 3251-3253). Article 6202003 (2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 - Proceedings). https://doi.org/10.1109/CECNet.2012.6202003

@inproceedings{34943f4b55a14a44b2041d921e4baa06,

title = "Fast surge suppression by inserting an AlGaN/GaN-based varactor",

abstract = "In this report, a metal-semiconductor-metal varactor diodes on top of an AlGaN/GaN-based epitaxial structure is proposed to the fast surge protection application. The fabricated device's capacitance-voltage (C-V) property and surge immunity are presented. In addition, to verify its capability for slow and fast surge absorption, three protection configurations; the gas discharge arrestor (GDA) only, in a state-of-the-art surge protection circuit, and the proposed circuit with AlGaN/GaN-based varactor were all under the system-level lightning and Electrostatic Discharge surge tests. The measured results show that the proposed fast surge protection circuit can suppress a fast intrusive pulse (FIP) voltage of 4000 V to 360 V, a reduction of 91 \%; whereas that suppresses to 1780 V only, a reduction of 55 \%, by using a traditional GDA only.",

keywords = "AlGaN/GaN-based varactor, Fast intrusive pulse (FIP), Surge protection, metal-semiconductor-metal (MSM) structure",

author = "Chang, \{L. B.\} and Wang, \{S. C.\} and Lin, \{S. L.\} and M. Das and Ferng, \{Y. C.\} and Cheng, \{M. J.\} and Chou, \{S. T.\} and L. Chow",

year = "2012",

doi = "10.1109/CECNet.2012.6202003",

language = "英语",

isbn = "9781457714153",

series = "2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 - Proceedings",

pages = "3251--3253",

booktitle = "2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 - Proceedings",

note = "2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 ; Conference date: 21-04-2012 Through 23-04-2012",

}

Chang, LB, Wang, SC, Lin, SL, Das, M, Ferng, YC, Cheng, MJ, Chou, ST & Chow, L 2012, Fast surge suppression by inserting an AlGaN/GaN-based varactor. in 2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 - Proceedings., 6202003, 2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 - Proceedings, pp. 3251-3253, 2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012, Three Gorges, China, 21/04/12. https://doi.org/10.1109/CECNet.2012.6202003

Fast surge suppression by inserting an AlGaN/GaN-based varactor. / Chang, L. B.; Wang, S. C.; Lin, S. L. et al.
2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 - Proceedings. 2012. p. 3251-3253 6202003 (2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fast surge suppression by inserting an AlGaN/GaN-based varactor

AU - Chang, L. B.

AU - Wang, S. C.

AU - Lin, S. L.

AU - Das, M.

AU - Ferng, Y. C.

AU - Cheng, M. J.

AU - Chou, S. T.

AU - Chow, L.

PY - 2012

Y1 - 2012

N2 - In this report, a metal-semiconductor-metal varactor diodes on top of an AlGaN/GaN-based epitaxial structure is proposed to the fast surge protection application. The fabricated device's capacitance-voltage (C-V) property and surge immunity are presented. In addition, to verify its capability for slow and fast surge absorption, three protection configurations; the gas discharge arrestor (GDA) only, in a state-of-the-art surge protection circuit, and the proposed circuit with AlGaN/GaN-based varactor were all under the system-level lightning and Electrostatic Discharge surge tests. The measured results show that the proposed fast surge protection circuit can suppress a fast intrusive pulse (FIP) voltage of 4000 V to 360 V, a reduction of 91 %; whereas that suppresses to 1780 V only, a reduction of 55 %, by using a traditional GDA only.

AB - In this report, a metal-semiconductor-metal varactor diodes on top of an AlGaN/GaN-based epitaxial structure is proposed to the fast surge protection application. The fabricated device's capacitance-voltage (C-V) property and surge immunity are presented. In addition, to verify its capability for slow and fast surge absorption, three protection configurations; the gas discharge arrestor (GDA) only, in a state-of-the-art surge protection circuit, and the proposed circuit with AlGaN/GaN-based varactor were all under the system-level lightning and Electrostatic Discharge surge tests. The measured results show that the proposed fast surge protection circuit can suppress a fast intrusive pulse (FIP) voltage of 4000 V to 360 V, a reduction of 91 %; whereas that suppresses to 1780 V only, a reduction of 55 %, by using a traditional GDA only.

KW - AlGaN/GaN-based varactor

KW - Fast intrusive pulse (FIP)

KW - Surge protection

KW - metal-semiconductor-metal (MSM) structure

UR - https://www.scopus.com/pages/publications/84861845127

U2 - 10.1109/CECNet.2012.6202003

DO - 10.1109/CECNet.2012.6202003

M3 - 会议稿件

AN - SCOPUS:84861845127

SN - 9781457714153

T3 - 2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 - Proceedings

SP - 3251

EP - 3253

BT - 2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 - Proceedings

T2 - 2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012

Y2 - 21 April 2012 through 23 April 2012

ER -

Chang LB, Wang SC, Lin SL, Das M, Ferng YC, Cheng MJ et al. Fast surge suppression by inserting an AlGaN/GaN-based varactor. In 2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 - Proceedings. 2012. p. 3251-3253. 6202003. (2012 2nd International Conference on Consumer Electronics, Communications and Networks, CECNet 2012 - Proceedings). doi: 10.1109/CECNet.2012.6202003

Fast surge suppression by inserting an AlGaN/GaN-based varactor

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