Fast write time and long retention 1T memory

A. Chin; M. Y. Yang; S. B. Chen; C. L. Sun; S. Y. Chen

Fast write time and long retention 1T memory

A. Chin^*, M. Y. Yang, S. B. Chen, C. L. Sun, S. Y. Chen

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to conference › Conference Paper › peer-review

4 Scopus citations

Abstract

It is desirable to achieve both fast data access time and long data retention time simultaneously. We have developed IT PZT/40Å-Al₂O₃ memory to achieve very fast write (program/erase) rime <100ns, years long data retention, and good endurance > 10¹⁰ P/E cycles. The small 1T size is highly competitive with other memory technologies.

Original language	English
Pages	18-19
Number of pages	2
State	Published - 2001
Externally published	Yes
Event	Device Research Conference (DRC) - Notre Dame, IN, United States Duration: 25 06 2001 → 27 06 2001

Conference

Conference	Device Research Conference (DRC)
Country/Territory	United States
City	Notre Dame, IN
Period	25/06/01 → 27/06/01

Cite this

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title = "Fast write time and long retention 1T memory",

abstract = "It is desirable to achieve both fast data access time and long data retention time simultaneously. We have developed IT PZT/40{\AA}-Al2O3 memory to achieve very fast write (program/erase) rime <100ns, years long data retention, and good endurance > 1010 P/E cycles. The small 1T size is highly competitive with other memory technologies.",

author = "A. Chin and Yang, {M. Y.} and Chen, {S. B.} and Sun, {C. L.} and Chen, {S. Y.}",

year = "2001",

language = "英语",

pages = "18--19",

note = "Device Research Conference (DRC) ; Conference date: 25-06-2001 Through 27-06-2001",

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TY - CONF

T1 - Fast write time and long retention 1T memory

AU - Chin, A.

AU - Yang, M. Y.

AU - Chen, S. B.

AU - Sun, C. L.

AU - Chen, S. Y.

PY - 2001

Y1 - 2001

N2 - It is desirable to achieve both fast data access time and long data retention time simultaneously. We have developed IT PZT/40Å-Al2O3 memory to achieve very fast write (program/erase) rime <100ns, years long data retention, and good endurance > 1010 P/E cycles. The small 1T size is highly competitive with other memory technologies.

AB - It is desirable to achieve both fast data access time and long data retention time simultaneously. We have developed IT PZT/40Å-Al2O3 memory to achieve very fast write (program/erase) rime <100ns, years long data retention, and good endurance > 1010 P/E cycles. The small 1T size is highly competitive with other memory technologies.

UR - http://www.scopus.com/inward/record.url?scp=0034866410&partnerID=8YFLogxK

M3 - 论文

AN - SCOPUS:0034866410

SP - 18

EP - 19

T2 - Device Research Conference (DRC)

Y2 - 25 June 2001 through 27 June 2001

ER -

Fast write time and long retention 1T memory

Abstract

Conference

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