Fault detection and isolation for plasma etching using model-based approach

Mu Huo Cheng*, L. Huen-Shin, Shin Yeu Lin, Chun Hung Liu, Wen Yo Lee, Chia Hung Tsai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

A fault detection and isolation system using model-based approach for the chamber pressure of plasma etching is developed. The dynamics of chamber pressure is modeled as a linear multiple-input-single-output closed-loop system and the model parameters are extracted by the system identification technique. The obtained parameters are then converted to physically meaningful features for detecting and isolating faults. The fuzzy inference and Dempster-Shafer evidence combining techniques are employed to detect and isolate fault from the features. The system has been evaluated by the measured data that are collected via SECS-II from the employed Lam-490 plasma etcher for processing practical products. The test results are satisfactory for a large amount of practical data and extensive computer simulations.

Original languageEnglish
Pages (from-to)208-214
Number of pages7
JournalIEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings
StatePublished - 2003
Externally publishedYes
EventThe 14th Annual IEEE/SEMI; Advanced Semiconductor Manufacturing Conference and Workshop 2003 - Munich, Germany
Duration: 31 03 200301 04 2003

Keywords

  • Dempster-Shafer technique
  • Fault detection and isolation
  • Fuzzy inference
  • Plasma etching
  • System identification

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