Ferroelectric characteristics of oriented Pb(Zr1-xTix)O3 films

San Yuan Chen; Chia Liang Sun

doi:10.1063/1.1394159

Ferroelectric characteristics of oriented Pb(Zr_1-xTi_x)O₃ films

San Yuan Chen^*
, Chia Liang Sun

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

85 Scopus citations

Abstract

Pb_1.2Zr_1-xTi_x)O₃ (PZT) films with a variety of compositions were prepared by spin coating on Pt/Ti/SiO₂/Si substrate with sol-gel processing. The roles of composition (phase) and orientation in ferroelectric properties of PZT films have been determined. The Zr-rich PZT films with (111)-oriented PZT films have a higher remanent polarization but also show a higher fatigue rate as compared to (100)-oriented films in both Zr-rich(65/35) and Ti-rich(35/65) PZT compositions. The lower fatigue rate of (100)-oriented film can be attributed to its easier reversible domain-wall motions compared to (111)-oriented PZT films due to the absence of internal field stress and less dependence on electrical field. A mode based on domain-wall contribution instead of film-electrode interface is favored to elucidate the role of orientation in fatigue characteristics of PZT films.

Original language	English
Pages (from-to)	2970-2974
Number of pages	5
Journal	Journal of Applied Physics
Volume	90
Issue number	6
DOIs	https://doi.org/10.1063/1.1394159
State	Published - 15 09 2001
Externally published	Yes

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title = "Ferroelectric characteristics of oriented Pb(Zr1-xTix)O3 films",

abstract = "Pb1.2Zr1-xTix)O3 (PZT) films with a variety of compositions were prepared by spin coating on Pt/Ti/SiO2/Si substrate with sol-gel processing. The roles of composition (phase) and orientation in ferroelectric properties of PZT films have been determined. The Zr-rich PZT films with (111)-oriented PZT films have a higher remanent polarization but also show a higher fatigue rate as compared to (100)-oriented films in both Zr-rich(65/35) and Ti-rich(35/65) PZT compositions. The lower fatigue rate of (100)-oriented film can be attributed to its easier reversible domain-wall motions compared to (111)-oriented PZT films due to the absence of internal field stress and less dependence on electrical field. A mode based on domain-wall contribution instead of film-electrode interface is favored to elucidate the role of orientation in fatigue characteristics of PZT films.",

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AU - Chen, San Yuan

AU - Sun, Chia Liang

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N2 - Pb1.2Zr1-xTix)O3 (PZT) films with a variety of compositions were prepared by spin coating on Pt/Ti/SiO2/Si substrate with sol-gel processing. The roles of composition (phase) and orientation in ferroelectric properties of PZT films have been determined. The Zr-rich PZT films with (111)-oriented PZT films have a higher remanent polarization but also show a higher fatigue rate as compared to (100)-oriented films in both Zr-rich(65/35) and Ti-rich(35/65) PZT compositions. The lower fatigue rate of (100)-oriented film can be attributed to its easier reversible domain-wall motions compared to (111)-oriented PZT films due to the absence of internal field stress and less dependence on electrical field. A mode based on domain-wall contribution instead of film-electrode interface is favored to elucidate the role of orientation in fatigue characteristics of PZT films.

AB - Pb1.2Zr1-xTix)O3 (PZT) films with a variety of compositions were prepared by spin coating on Pt/Ti/SiO2/Si substrate with sol-gel processing. The roles of composition (phase) and orientation in ferroelectric properties of PZT films have been determined. The Zr-rich PZT films with (111)-oriented PZT films have a higher remanent polarization but also show a higher fatigue rate as compared to (100)-oriented films in both Zr-rich(65/35) and Ti-rich(35/65) PZT compositions. The lower fatigue rate of (100)-oriented film can be attributed to its easier reversible domain-wall motions compared to (111)-oriented PZT films due to the absence of internal field stress and less dependence on electrical field. A mode based on domain-wall contribution instead of film-electrode interface is favored to elucidate the role of orientation in fatigue characteristics of PZT films.

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DO - 10.1063/1.1394159

M3 - 文章

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JO - Journal of Applied Physics

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Ferroelectric characteristics of oriented Pb(Zr_1-xTi_x)O₃ films

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