Ferromagnetic interfacial interaction and the proximity effect in a Co 2FeAl/(Ga,Mn)As Bilayer

S. H. Nie; Y. Y. Chin; W. Q. Liu; J. C. Tung; J. Lu; H. J. Lin; G. Y. Guo; K. K. Meng; L. Chen; L. J. Zhu; D. Pan; C. T. Chen; Y. B. Xu; W. S. Yan; J. H. Zhao

doi:10.1103/PhysRevLett.111.027203

Ferromagnetic interfacial interaction and the proximity effect in a Co ₂FeAl/(Ga,Mn)As Bilayer

S. H. Nie^*
, Y. Y. Chin
, W. Q. Liu
, J. C. Tung
, J. Lu
, H. J. Lin
, G. Y. Guo
, K. K. Meng
, L. Chen
, L. J. Zhu
, D. Pan
, C. T. Chen
, Y. B. Xu
, W. S. Yan
, J. H. Zhao

^*Corresponding author for this work

CAS - Institute of Semiconductors
National Synchrotron Radiation Research Center Taiwan
University of York
National Chengchi University
National Taiwan University
University of Science and Technology of China

Research output: Contribution to journal › Journal Article › peer-review

35 Scopus citations

Abstract

The magnetic properties of a Co₂FeAl/(Ga,Mn)As bilayer epitaxied on GaAs (001) are studied both experimentally and theoretically. Unlike the common antiferromagnetic interfacial interaction existing in most ferromagnet-magnetic semiconductor bilayers, a ferromagnetic interfacial interaction in the Co₂FeAl/(Ga,Mn)As bilayer is observed from measurements of magnetic hysteresis and x-ray magnetic circular dichroism. The Mn ions in a 1.36 nm thick (Ga,Mn)As layer remain spin polarized up to 400 K due to the magnetic proximity effect. The minor loops of the Co₂FeAl/ (Ga,Mn)As bilayer shift with a small ferromagnetic interaction field of +24 Oe and -23 Oe at 15 K. The observed ferromagnetic interfacial coupling is supported by ab initio density functional calculations. These findings may provide a viable pathway for designing room-temperature semiconductor spintronic devices through magnetic proximity effect.

Original language	English
Article number	027203
Journal	Physical Review Letters
Volume	111
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevLett.111.027203
State	Published - 09 07 2013
Externally published	Yes

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Nie, S. H., Chin, Y. Y., Liu, W. Q., Tung, J. C., Lu, J., Lin, H. J., Guo, G. Y., Meng, K. K., Chen, L., Zhu, L. J., Pan, D., Chen, C. T., Xu, Y. B., Yan, W. S., & Zhao, J. H. (2013). Ferromagnetic interfacial interaction and the proximity effect in a Co ₂FeAl/(Ga,Mn)As Bilayer. Physical Review Letters, 111(2), Article 027203. https://doi.org/10.1103/PhysRevLett.111.027203

@article{f95fdfc91f844ef197528ab4143e9270,

title = "Ferromagnetic interfacial interaction and the proximity effect in a Co 2FeAl/(Ga,Mn)As Bilayer",

abstract = "The magnetic properties of a Co2FeAl/(Ga,Mn)As bilayer epitaxied on GaAs (001) are studied both experimentally and theoretically. Unlike the common antiferromagnetic interfacial interaction existing in most ferromagnet-magnetic semiconductor bilayers, a ferromagnetic interfacial interaction in the Co2FeAl/(Ga,Mn)As bilayer is observed from measurements of magnetic hysteresis and x-ray magnetic circular dichroism. The Mn ions in a 1.36 nm thick (Ga,Mn)As layer remain spin polarized up to 400 K due to the magnetic proximity effect. The minor loops of the Co2FeAl/ (Ga,Mn)As bilayer shift with a small ferromagnetic interaction field of +24 Oe and -23 Oe at 15 K. The observed ferromagnetic interfacial coupling is supported by ab initio density functional calculations. These findings may provide a viable pathway for designing room-temperature semiconductor spintronic devices through magnetic proximity effect.",

author = "Nie, \{S. H.\} and Chin, \{Y. Y.\} and Liu, \{W. Q.\} and Tung, \{J. C.\} and J. Lu and Lin, \{H. J.\} and Guo, \{G. Y.\} and Meng, \{K. K.\} and L. Chen and Zhu, \{L. J.\} and D. Pan and Chen, \{C. T.\} and Xu, \{Y. B.\} and Yan, \{W. S.\} and Zhao, \{J. H.\}",

year = "2013",

month = jul,

day = "9",

doi = "10.1103/PhysRevLett.111.027203",

language = "英语",

volume = "111",

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TY - JOUR

T1 - Ferromagnetic interfacial interaction and the proximity effect in a Co 2FeAl/(Ga,Mn)As Bilayer

AU - Nie, S. H.

AU - Chin, Y. Y.

AU - Liu, W. Q.

AU - Tung, J. C.

AU - Lu, J.

AU - Lin, H. J.

AU - Guo, G. Y.

AU - Meng, K. K.

AU - Chen, L.

AU - Zhu, L. J.

AU - Pan, D.

AU - Chen, C. T.

AU - Xu, Y. B.

AU - Yan, W. S.

AU - Zhao, J. H.

PY - 2013/7/9

Y1 - 2013/7/9

N2 - The magnetic properties of a Co2FeAl/(Ga,Mn)As bilayer epitaxied on GaAs (001) are studied both experimentally and theoretically. Unlike the common antiferromagnetic interfacial interaction existing in most ferromagnet-magnetic semiconductor bilayers, a ferromagnetic interfacial interaction in the Co2FeAl/(Ga,Mn)As bilayer is observed from measurements of magnetic hysteresis and x-ray magnetic circular dichroism. The Mn ions in a 1.36 nm thick (Ga,Mn)As layer remain spin polarized up to 400 K due to the magnetic proximity effect. The minor loops of the Co2FeAl/ (Ga,Mn)As bilayer shift with a small ferromagnetic interaction field of +24 Oe and -23 Oe at 15 K. The observed ferromagnetic interfacial coupling is supported by ab initio density functional calculations. These findings may provide a viable pathway for designing room-temperature semiconductor spintronic devices through magnetic proximity effect.

AB - The magnetic properties of a Co2FeAl/(Ga,Mn)As bilayer epitaxied on GaAs (001) are studied both experimentally and theoretically. Unlike the common antiferromagnetic interfacial interaction existing in most ferromagnet-magnetic semiconductor bilayers, a ferromagnetic interfacial interaction in the Co2FeAl/(Ga,Mn)As bilayer is observed from measurements of magnetic hysteresis and x-ray magnetic circular dichroism. The Mn ions in a 1.36 nm thick (Ga,Mn)As layer remain spin polarized up to 400 K due to the magnetic proximity effect. The minor loops of the Co2FeAl/ (Ga,Mn)As bilayer shift with a small ferromagnetic interaction field of +24 Oe and -23 Oe at 15 K. The observed ferromagnetic interfacial coupling is supported by ab initio density functional calculations. These findings may provide a viable pathway for designing room-temperature semiconductor spintronic devices through magnetic proximity effect.

UR - https://www.scopus.com/pages/publications/84880129946

U2 - 10.1103/PhysRevLett.111.027203

DO - 10.1103/PhysRevLett.111.027203

M3 - 文章

AN - SCOPUS:84880129946

SN - 0031-9007

VL - 111

JO - Physical Review Letters

JF - Physical Review Letters

IS - 2

M1 - 027203

ER -

Ferromagnetic interfacial interaction and the proximity effect in a Co ₂FeAl/(Ga,Mn)As Bilayer

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